Aim of the research at the IHT...
is the optimization of existing and the research of novel device concepts for state-of-the-art logic, memory and power electronic applications based on the latest quantum electronic findings.
Silicon-based crystal growth using molecular beam epitaxy (MBE) of the Group IV heteroepitaxy competence field is the backbone of device research.
Directly to the competence fields
Contact

Prof. Dr. habil.