Foundation
The Institute for Semiconductor Engineering was founded on 1 April 1958 with the inauguration of Prof. Dr.-Ing. habil. Joachim Dosse was initially founded under the name "Institut für Höchstfrequenztechnik" (engl. Institute of Highest Frequency Technology). With his work and lectures on the transistor, Prof. Dosse laid the foundation for semiconductor engineering at the then Technical University and today's University of Stuttgart.
In the winter semester of 1967/1968, the Institute of Highest Frequency Technology, which at that time was located at Breitscheidstraße 2 in the centre of Stuttgart, was renamed the Institute of Semiconductor Engineering. This was accompanied by the founding of the Institute of Radio Frequency Technology (IHF), whose first director was Prof. Dr.-Ing. Alois Egger.
Moving to the University Campus Vaihingen
In 1997/1998, the IHT moved from Breitscheidstraße to the new building II of the Electrotechnical Institutes on the university campus in Vaihingen, where it received a modern clean room with a laboratory line for the production of SiGe:C-based high-frequency components.
In the course of the 2000s, the institute's process technology and analytics were continuously expanded, which was reflected in the acquisition of two further molecular beam epitaxy systems and a 110 GHz network analyzer.
Institute Directors from the foundation...
From 1978 to 1993 the institute was headed by Prof. Dr. phil. nat. Waldemar von Münch. During this time, the focus of his work was initially on the development of III/V-based semiconductor devices, later on on the development of silicon-based sensors and actuators.
With the takeover of the institute management by Prof. Dr. phil. Erich Kasper in autumn 1993 the research focus changed to the development and production of high frequency components based on Group IV semiconductor solid solutions consisting of silicon, germanium and carbon (SiGe:C). The basis for this was the installation of a SiGe:C molecular beam epitaxy system, today's "A-MBE", for crystal growth under ultra-high vacuum conditions and adequate measurement and analysis technology.
From October 2008 until August 2021 the IHT has been run by Prof. Dr.-Ing. habil. Jörg Schulze. Since then IHT has expanded its research activities in the field of molecular beam epitaxy to a complete Group-IV-Heteroepitaxy dealing with crystal growth and doping of SiGe:C:Sn crystals. Since then, this has formed the basis for the three component competence fields:
Contact
Alwin Daus
Prof. Dr.Director
Michael Oehme
Dr.Academic Senior Counsellor
Vice Director