Institute of Semiconductor Engineering

History of the institute

What has happened at IHT since the late 1950s?

University of Stuttgart at Breitscheidstraße 2

Foundation

The Institute for Semiconductor Engineering was founded on 1 April 1958 with the inauguration of Prof. Dr.-Ing. habil. Joachim Dosse was initially founded under the name "Institut für Höchstfrequenztechnik" (engl. Institute of Highest Frequency Technology). With his work and lectures on the transistor, Prof. Dosse laid the foundation for semiconductor engineering at the then Technical University and today's University of Stuttgart.

Start of semiconductor engineering at the University of Stuttgart

In the winter semester of 1967/1968, the Institute of Highest Frequency Technology, which at that time was located at Breitscheidstraße 2 in the centre of Stuttgart, was renamed the Institute of Semiconductor Engineering. This was accompanied by the founding of the Institute of Radio Frequency Technology (IHF), whose first director was Prof. Dr.-Ing. Alois Egger. 

The IHT in the building ETI II on the Campus Vaihingen
The IHT in the building ETI II on the Campus Vaihingen

Moving to the University Campus Vaihingen

In 1997/1998, the IHT moved from Breitscheidstraße to the new building II of the Electrotechnical Institutes on the university campus in Vaihingen, where it received a modern clean room with a laboratory line for the production of SiGe:C-based high-frequency components.

High frequency measuring station with a 110GHz network analyzer
High frequency measuring station with a 110GHz network analyzer

In the course of the 2000s, the institute's process technology and analytics were continuously expanded, which was reflected in the acquisition of two further molecular beam epitaxy systems and a 110 GHz network analyzer.

Institute Directors from the foundation...

From 1978 to 1993 the institute was headed by Prof. Dr. phil. nat. Waldemar von Münch. During this time, the focus of his work was initially on the development of III/V-based semiconductor devices, later on on the development of silicon-based sensors and actuators.

With the takeover of the institute management by Prof. Dr. phil. Erich Kasper in autumn 1993 the research focus changed to the development and production of high frequency components based on Group IV semiconductor solid solutions consisting of silicon, germanium and carbon (SiGe:C). The basis for this was the installation of a SiGe:C molecular beam epitaxy system, today's "A-MBE", for crystal growth under ultra-high vacuum conditions and adequate measurement and analysis technology.

...until today

Prof. Dr. habil. Jörg Schulze
Prof. Dr. habil. Jörg Schulze

Since October 2008 the IHT has been run by Prof. Dr.-Ing. habil. Jörg Schulze. Since then IHT has expanded its research activities in the field of molecular beam epitaxy to a complete Group-IV-Heteroepitaxy dealing with crystal growth and doping of SiGe:C:Sn crystals. Since then, this has formed the basis for the three component competence fields:

 

Contact

This picture showsJörg Schulze
Prof. Dr. habil.

Jörg Schulze

Head of Institute

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