General information about teaching at the IHT
- Organizational information on the courses can be found on C@MPUS,
- Learning materials and records are available in ILIAS,
- The official module manuals can be found under Bologna for students.
Overview of the courses of the IHT (Winter semester)
Description
The course “Semiconductor Engineering – Bipolar Technology” (HL I), together with the following courses:
- “Semiconductor Engineering – The Nano-CMOS Era” (HL II),
- “Semiconductor Engineering – Semiconductor Power Devices” (SE III), and
- “Semiconductor Engineering – Intelligent Sensors & Actors” (SE IV)
the Semiconductor Engineering program at the IHT. The course is offered every other semester, always during the winter semester.
The following topics are covered:
1.) Description of a p(s)n junction in thermodynamic equilibrium (space charge regions, Poisson’s equation, “depletion” approximation, and “built-in” voltage),
2.) Description of a p-s-n junction out of equilibrium (I-V characteristics of the ideal p-n junction, recombination mechanisms in p-n junctions, I-V characteristics of the real p-n junction, breakdown mechanisms in p-n junctions),
3.) Special types of diodes: Z-diodes (Zener diode and “avalanche” diode), IMPATT diode (“Impact-Ionization-Avalanche-Transit-Time” diode), Gunn diode, Uni-tunnel diode, Esaki tunnel diode, Shockley diode, DIAC (“Diode for Alternating Current”),
4.) Structure and operation of bipolar and heterobipolar transistors: ideal and real-world behavior and high-frequency operation,
5.) Manufacturing processes for modern bipolar transistors.
Recommended Prerequisites
Knowledge such as that taught in the courses “Microelectronics” (ME) and “Semiconductor Technology – Process Technology” (HLT I) is recommended.
Language
German
Contact
Prof. Alwin Daus, Dr. Michael Oehme, Christian Spieth
Description
The course “Semiconductor Technology – Process Technology” (HLT I) is part of the IHT’s semiconductor technology cycle, along with the following courses:
- “Semiconductor Technology – Epitaxy” (HLT II) and
- “Semiconductor Technology – Semiconductor Production Technology” (HLT III)
as part of the IHT’s semiconductor technology series. The course is offered every other semester, always during the winter semester.
The following topics are covered:
1.) Introduction to silicon-based semiconductor technology,
2.) Technological fundamentals (process parameters and basic technological processes),
3.) Substrate and wafer fabrication (CZ wafers, FZ wafers, and “silicon-on-insulator” wafers),
4.) Lithography (optical lithography and alternative methods) and patterning methods (wet chemical, dry chemical, and physicochemical),
5.) Doping methods: epitaxy, diffusion, and ion implantation,
6.) Fabrication and patterning of insulator layers (standard dielectrics, “low-k,” “medium-k,” and “high-k” dielectrics) and planarization methods,
7.) Fabrication and patterning of metallic layers.
As an outlook, the lecture concludes with a discussion of assembly and interconnection technology; exemplary fabrication processes for various microelectronic devices are also discussed.
Knowledge such as that taught in the courses “Microelectronics” (ME) and “Semiconductor Technology – Bipolar Technology” (HL I) is recommended.
German
Contact
Prof. Alwin Daus, Dr. Daniel Schwarz, Harishnarayan Ramachandra
Description
The lecture is offered every other semester, always in the winter semester.
The following content will be discussed in detail:
o Discussion of the “band structure” of electronic materials formulated for periodic crystal structures including Fermi and Boltzmann statistics and density of states function,
o Description of a pn junction (IV characteristic of an ideal pn junction, generation and recombination mechanisms in pn junctions, IV characteristic of a real pn junction, breakdown mechanisms in real pn junctions),
o Semiconductor/metal contact: The Schottky diode, the quantum mechanical tunneling effect and the ohmic contact,
o Structure and function of the bipolar junction transistor: emitter effect, emitter efficiency and transport factor, ideal and real behavior,
o Metal/insulator/semiconductor junction: The electrical behavior of an ideal MOS electrode (MOS) under external voltage and the states of a MOS electrode (accumulation, weak and strong depletion, weak and strong inversion).
Recommended Prerequisites
Basic understanding in material science and microelectronic device functions.
Language
English (primary), German
Contact
Prof. Alwin Daus, Dr. Michael Oehme, Marco Cusmano
Description
The following topics are planned to be discussed in this course:
- Introduction to quantum physics, Schrödinger equation, and potential problems
- Quantum effects in (scaled) MOSFETs
- Properties of quantum wells, wires, and dots
- Electronic devices based on tunneling: Diodes, transistors
- Optoelectronic devices based on tunneling: lasers and other emitters
- Low dimensional materials: carbon nanotubes, graphene, transition metal dichalcogenides, hexagonal boron nitride
Recommended Prerequisites
Recommended knowledge similar as is provided in the lectures: Microelectronics (ME), Semiconductor Engineering: Bipolar Technology (HL I), Semiconductor Engineering I: Junctions & Bipolar Devices, Semiconductor Technology: Nano-CMOS Era (SE II), Semiconductor Technology: Process Technology (HLT I), Semiconductor Technology: Epitaxy (HLT II).
Language
English
Contact
Prof. Alwin Daus, Dr. Jennifer Schmeink
Overview of the courses of the IHT (Summer Semester)
Description
The “Microelectronics” lectures lay the groundwork for the advanced lectures, specialized lab courses, and thesis projects in the following areas of specialization:
- Micro- and Optoelectronics (B.Sc. in “Electrical Engineering and Information Technology”),
- Nano- and Optoelectronics (M.Sc. in “Electrical Engineering and Information Technology”),
- Power Electronics Technologies and Systems (M.Sc. in “Electrical Engineering and Information Technology”)
- Nano and Opto Electronics (M.Sc. in “Electrical Engineering”),
- Power-Electronic Systems and Technologies (M.Sc. in “Electrical Engineering”)
Building on the “Microelectronics I” (ME I) course, the “Microelectronics II” (ME II) course covers the following topics:
1.) The semiconductor-semiconductor contact: electrostatic properties of the pn junction, characteristic curves and properties of pn diodes,
2.) The semiconductor/metal contact: The Schottky diode and the ohmic contact,
3.) Structure and function of a bipolar transistor and an introduction to basic bipolar transistor circuits,
4.) The metal/insulator/semiconductor contact: The electrical behavior of a MOS electrode (MOS, short for “Metal-Oxide-Semiconductor”),
5.) Structure and function of a long-channel MOSFET (MOSFET, short for “MOS Field-Effect Transistor”).
Recommended Prerequisites
It is recommended that you have knowledge such as that taught in the following courses:
- Microelectronics I (ME I),
- Advanced Mathematics for Physicists, Cyberneticists, and Electrical Engineers (Part 1),
- Fundamentals of Electrical Engineering (Part 1), and
- Experimental Physics for Electrical Engineers
. In addition, it is recommended that you take the following courses concurrently with the “Microelectronics II” (ME II) course:
- Advanced Mathematics for Physicists, Cyberneticists, and Electrical Engineers (Part 2),
- Fundamentals of Electrical Engineering (Part 2), including the introductory lab.
Language
German
Contact
Prof. Alwin Daus
Description
The lectures on Semiconductor Engineering II – Nano-CMOS Era (SE II) forms together with the lectures on
- Halbleitertechnik I – Bipolartechnik (HL I),
- Semiconductor Engineering III – Semiconductor Power Devices (SE III) and
- Semiconductor Engineering IV – Intelligent Sensors &;;; Actors (SE IV)
the IHT lecture series on Semiconductor Engineering (Halbleitertechnik). The lectures are held every second semester during Summer terms.
The lectures will be given in English.
The following content will be covered by the lectures:
- Ideal and real behavior of a log-channel Metal-Oxid-Semiconductor Field-Effect Transistor (MOSFET),
- Moore´s Law and the International Roadmap on Semiconductors (ITRS),
- MOSFET scaling and short-channel effects: From long-channel to short-channel MOSFETs,
- Counter measures for suppressing short-channel effects,
- Modern Complementary MOS (CMOS) manufacturing processes,
- MOS-based memory concepts: Trench- and Stacked-Capacitor-concepts for Dynamic Random Access Memories (DRAMs) and concepts of Static RAMs (SRAMs)
Recommended Prerequisites
It is recommended to have knowledge in semiconductor physics, engineering and technology e.g. covered by the lectures:
- Mikroelektronik (ME),
- Halbleitertechnik I – Bipolartechnik (HL I) and
- Halbleitertechnologie I – Prozesstechnologie (HLT I).
Language
English
Contact
Prof. Alwin Daus, Dr. Daniel Schwarz, Sören Schäfer
Description
The course “Semiconductor Technology – Epitaxy” (HLT II) is part of the IHT's semiconductor technology cycle, along with the following courses:
- “Semiconductor Technology – Process Technology” (HLT I) and
- “Semiconductor Technology – Semiconductor Production Technology” (HLT III)
as part of the IHT’s semiconductor technology series. The course is offered every other semester, always during the summer semester.
The following topics will be covered:
1.) Epitaxial growth and heteroepitaxy,
2.) Atomic-level understanding of growth (adsorption, nucleation, step migration, desorption); crystal lattices, dislocations, stacking faults, detection methods
3.) Molecular beam epitaxy, subsystems, and process flow;
4.) Doping strategies for nanometer-scale structures; surface segregation,
5.) Lattice-mismatched interfaces, pseudomorphic growth, virtual substrates.
Recommended Prerequisites
Knowledge of the following topics is recommended, such as that taught in:
- Microelectronics (ME),
- Semiconductor Engineering I – Bipolar Technology (HL I), and
- Semiconductor Technology I – Process Technology (HLT I)
Language
German
Contact
Prof. Alwin Daus, Dr. Michael Oehme, Christian Spieth
Description
The lecture Semiconductor Engineering IV – Intelligent Sensors and Actors (SE IV) forms together with the lectures
- Semiconductor Engineering: Bipolar Technology (HL I)
- Semiconductor Engineering: Nano CMOS era (HL II),
- Semiconductor Engineering: Power Devices (HL III) and
the semiconductor engineering cycle of the IHT. The lecture is offered always in the summer semester.
The following contents are planned to be discussed:
- Sensor and actor principles
- Sensor basics and characteristics
- Temperature sensors
- Radiation sensors
- Mechanical sensors (MEMS)
- Magnetic sensors
- Chemical sensors
Recommended Prerequisites
It is recommended to have knowledge in semiconductor physics, engineering and technology e.g. covered by the lectures:
- Mikroelektronik (ME),
- Halbleitertechnik I – Bipolartechnik (HL I),
- Semiconductor Engineering II – Nano-CMOS Era (SE II),
- Halbleitertechnologie I – Prozesstechnologie (HLT I).
Language
English
Contact
Prof. Alwin Daus, Christian Spieth
Description
The lectures on
Semiconductor Engineering III - Semiconductor Power Devices (SE III)
form together with the lectures on:
- Halbleitertechnik I – Bipolartechnik (HL I),
- Semiconductor Engineering II – Nano-CMOS Era (SE II) and
- Semiconductor Engineering IV – Intelligent Sensors and Actors (SE IV)
the IHT lecture series on Semiconductor Engineering (Halbleitertechnik).
The lectures are held every second semester during Summer terms.
The lectures will be given in English, if non-German native speakers attend the course. Otherwise the lectures will be given in German.
The following content will be covered by the lectures:
1.) Physical, chemical and electrical properties, sythesis and industrial manufacturing of the semiconductor materials for power electronics: Silicon (Si), Silicon carbide (SiC), Gallium nitride (GaN) and Diamond (C)
2.) Electric behavior, manufacturing and applications of the basic elements of power electronics: Power PIN Diode, Schottky Diode, Merged PIN/Schottky Diode (MPS), Shockley Diode and Diode for Alternating Current (DIAC)
3.) Static and dynamic electric bahavior, manufacturing and applications of semiconductor power switches: Power Bipolar Junction Transistor in Darlington configuration; Power Metal-Oxid-Semiconductor Field-Effect Transistor (Power-MOSFET) and the types of Power-MOSFETs Double-Diffused Power-MOSFET (DMOS), V-/U-Groove Power-MOSFET and CoolMOS; Insulated Gate Bipolar Transistor (IGBT); Thyristors and the types of thyristors Light-triggered Thyristor, Gate Turn-Off- and MOS-Controlled Thyristor
Recommended Prerequisites
It is recommended to have knowledge in semiconductor physics, engineering and technology e.g. covered by the lectures:
- Mikroelektronik (ME),
- Halbleitertechnik I – Bipolartechnik (HL I),
- Semiconductor Engineering II - Nano-CMOS Era (SE II), and
- Halbleitertechnologie I – Prozesstechnologie (HLT I).
Language
English
Contact
Prof. Alwin Daus, Dr. Daniel Schwarz
Description
The following topics are planned to be discussed in this course:
o Introduction to the role of different memory technologies including memory hierarchy and the increasing importance of electronic memory
o Opportunities gained by emerging memory technologies that go beyond conventional memory
o Static random-access memory (SRAM)
o Dynamic random-access memory (DRAM)
o Flash
o Hard disk drives (HDD)
o Resistive random-access memory (RRAM, several types)
o Phase-change memory (PCM)
o Ferroelectric memory (several types)
o Magnetic random-access memory (MRAM, several types)
o Compact modeling of memory devices with LTSpice
Recommended Prerequisites
Basic understanding in material science and microelectronic device functions. For example lectures like Microelectronics (ME), Semiconductor Engineering: Bipolar Technology (HL I), Semiconductor Engineering I: Junctions & and Bipolar Devices (SE1), Semiconductor Technology: Nano-CMOS Era (SE II), Semiconductor Technology: Process Technology (HLT I)
Language
English (primary), German
Contact
Prof. Alwin Daus
Professional Internship (Winter & Summer Semester)
Description
The specialized lab course (Bachelor’s): “Semiconductor Technology – The Ge Heterodiode” is part of the IHT’s lab cycle, along with the specialized lab course (Master’s): “Semiconductor Technology – Group IV Photonics.”
The specialized lab course is offered every semester.
The following topics are covered:
1.) Introduction to working in a cleanroom,
2.) How a germanium heterodiode works, analysis of the characteristic curve of a germanium heterodiode, fabrication sequence of a germanium heterodiode.
Fabrication of the germanium heterodiode:
3.) Introduction to the growth of semiconductor layers using molecular beam epitaxy,
4.) Performance of selected fabrication steps (patterning, deposition, sputtering, and cleaning techniques) in a cleanroom environment, taking appropriate process control into account.
Characterization of the fabricated germanium heterodiode:
5.) Metrological characterization using “on-wafer” measurement techniques,
6.) Evaluation of the characteristic curves and extraction of the diode parameters.
Assembly of the germanium heterodiode:
7.) Assembly and bonding techniques for the germanium heterodiode in a typical diode package
Recommended Prerequisites
Knowledge of the following topics is recommended, such as that taught in:
- Microelectronics (ME),
- Semiconductor Engineering I – Bipolar Technology (HL I), and
- Semiconductor Technology I – Process Technology (HLT I)
Language
German
Contact
Prof. Alwin Daus, Dr. Michael Oehme, Dr. Daniel Schwarz
Contact
Alwin Daus
Prof. Dr.Director
Michael Oehme
Dr.Academic Senior Counsellor
Vice Director