Courses

Institute of Semiconductor Engineering

Which courses do we offer?

General information about teaching at the IHT

  • Organizational information on the courses can be found on C@MPUS,
  • Learning materials and records are available in ILIAS,
  • The official module manuals can be found under Bologna for students.

Overview of the courses of the IHT

Classification in the curriculum

The lectures Mikroelektronik I (ME I) will be read by Prof. Ingmar Kallfass from the Institute of Robust Power Semiconductor Systems (ILH) and Mikroelektronik II (ME II) will be read by Dr. Michael Oehme and provide the basics for all further lectures at the IHT. 

Recommended requirements

None.

Contents

The following contents will be discussed:

  1. The history of semiconductor devices
  2. Silicon - material of microelectronics
  3. Charge carriers and currents in semiconductors
  4. Recombination and generation of charge carriers
  5. Electrostatics of the pn-junction
  6. Currents at pn-junction
  7. Characteristic curve and properties of pn diodes
  8. Introduction to transistor technology
  9. The Bohr atomic model and the relationship between crystal structure and electrical conductivity
  10. Load carriers in metals - Ohm's law
  11. Schottky contact
  12. Structure and function of a bipolar transistor
  13. Introduction to bipolar transistor circuits
  14. MOS electrode and the electrical behaviour of a MOS electrode
  15. MOSFET and CMOS logic
  16. Introduction to MOSFET circuits
  17. MOSFET-based memory (SRAM and DRAM)
  18. Power transistors (IGBT, IGT, Power-MOSFET)

Learning Goals

The students have the knowledge and understanding of the semiconductor fundamentals, as well as the knowledge of important device types and their physics. They have knowledge of the basics of semiconductor technology required to produce semiconductor devices.

General Conditions

Credit Points (LP) 9
Semester hours per week (SWS) 4   (exercise 2, lecture 2)
Cycle Winter semester ME I / Summer semester ME II
Language German
Estimation of workload Attendance time· 84 hours
Private study· 186 hours
Sum · 270 hours
Contact
 

Classification in the curriculum

The lecture Semiconductor Technology: Bipolar Technology (HL I) forms together with the lectures

  • Semiconductor Engineering: Nano CMOS era (HL II),
  • Semiconductor Engineering: Power Devices (HL III) and
  • Semiconductor Engineering: Intelligent Sensors and Actuators (HL IV) 

the semiconductor engineering cycle of the IHT. The lecture is offered every second semester, always in the winter semester.

Recommended requirements

It is recommended that you have some knowledge of microelectronics (ME) and semiconductor technology: process technology (HLT I).

Contents

The following contents will be discussed:

  1. Description of a psn transition in thermodynamic equilibrium (space charge zones, Poisson equation, depletion approximation and built-in voltage),
  2. Description of a non-equilibrium psn transition (I-U characterization of the ideal pn transition, recombination mechanisms in pn transitions, I-U characterization of the real pn transition, breakthrough mechanisms in pn transitions),
  3. Diode special shapes: Schottky diode and ohmic contact, Z diodes (Zener diode and Avalanche diode), IMPATT diode (Impact Ionization Avalanche Transit Time diode), Gunn diode, Uni tunnel diode, Esaki tunnel diode, Shockley diode, DIAC (Diode for Alternating Current),
  4. Structure and function of bipolar and heterobiplar transistors: Ideal and real behaviour and high-frequency operation,
  5. Thyristor and light ignited thyristor, TRIAC (Triode for Alternating Current).

At the end of the lecture, power bipolar transistors with isolated gates such as the gate turn-off thyristor (GTO thyristor) and the insulated gate bipolar transistor (IGBT) and BiCMOS circuits will be discussed as an outlook.

Learning Goals

The students have the knowledge and understanding of the mathematical-physical basics of device modeling, know the ideal and the real functionality and the structure of various semiconductor diodes and have a comprehensive understanding of the structure and the ideal/real behavior of a bipolar and a heterobipolar transistor. In addition, they are familiar with the basic operation of thyristors and have basic knowledge of the operation of isolated gate power bipolar transistors and BiCMOS circuits (BiCMOS: circuit technology combining bipolar and field effect transistors). They are also familiar with the basic manufacturing processes of modern bipolar and BiCMOS processes.

General Conditions

Credit Points (LP) 6
Semester hours per week (SWS) 4   (exercise 2, lecture2)
Cycle Winter semester
Language German
Estimation of workload Attendance time· 45 hours
Private study· 135 hours
Sum· 180 hours
Contact
 

This course is currently not provided.

This course is currently not provided.

Classification in the curriculum

The lecture Semiconductor Technology: Sensors and Actors (HL IV) forms together with the lectures

  • Semiconductor Engineering: Bipolar Technology (HL I),
  • Semiconductor Engineering: Nano CMOS era (HL II) and
  • Semiconductor Engineering: Power Devices (HL III).

the semiconductor engineering cycle of the IHT. The lecture is offered every second semester, always in the summer semester.

Recommended requirements

It is recommended to have knowledge in semiconductor physics, engineering and technology e.g. covered by the lectures:

  • Mikroelectronic (ME),
  • Semiconductor Engineering: Bipolar Technology (HL I),
  • Semiconductor Engineering II – Nano-CMOS Era (HL II),
  • Semiconductor Technology I –  Process Technology (HLT I).

Contents

The following contents will be discussed:

  • Sensor and actor principles
  • Micromachining in silicon
  • Integration with microelectronics circuits
  • Device principles, characteristics, monolithic integration techniques, packaging
  • Examples with emphasis on automotive applications

Learning Goals

This course covers the design and fabrication of a range of silicon-based devices from diodes and transistors, to sensors and actuators such as those used in automotive applications. The course also covers all aspects of Si device processing, with most processes being available in our clean room. Students can therefore gain familiarity with fabrication techniques including deposition, photolithography, wet and dry etching, oxidation, and diffusion. Our institute has strong links with semiconductor manufacturing companies, reflected in the course syllabus.

General Conditions

Credit Points (LP)

6

Semester hours per week (SWS)

4   (exercise 2, lecture2)

Cycle

Summer semester

Language

Englisch

Estimation of workload

Attendance time· 45 hours
Private study· 135 hours
Sum· 180 hours

Contact

Lecturer

Dr. Michael Oehme

Assistant

Michael Hack, M. Sc.

 

Classification in the curriculum

The lecture Semiconductor Technology: Process Technology (HLT I) belongs to the lectures

  • Semiconductor Technology: Epitaxy (HLT II) and
  • Semiconductor technology: Semiconductor production technology (HLT III)

to the semiconductor technology cycle of the IHT. The lecture is offered every second semester, always in the winter semester.

Recommended requirements

Knowledge is recommended, such as that provided in microelectronics (ME).

Contents

The following contents will be discussed:

  1. Introduction to silicon-based semiconductor technology,
  2. Technological basics (process parameters and basic technology processes),
  3. Substrate and wafer manufacturing (CZ wafers, FZ wafers and silicon-on-insulator wafers),
  4. Lithography (optical lithography and alternative methods) and structuring methods (wet-chemical, dry-chemical and physico-chemical),
  5. Doping methods: epitaxy, diffusion and ion implantation,
  6. Production and structuring of insulator layers (standard dielectrics, low-k, medium k and high-k dielectrics) and planarization methods,
  7. Production and structuring of metallic layers.
  8. At the end of the lecture, the assembly and connection technology will be discussed and exemplary manufacturing processes of different microelectronic components will be discussed.

Learning Goals

The students have an understanding of the importance of silicon-based semiconductor technology for the global electronics market, know and understand the technological basics of each semiconductor technology. In addition, they are familiar with state-of-the-art processes for substrate and wafer fabrication, for doping semiconductor layers and for structuring (lithography methods and wet and dry chemical etching) semiconductor, insulator and metal layers. They know the most important insulator materials and metallic materials of silicon-based semiconductor technology and gain a first insight into the assembly and interconnection technology for the production of complex electronic components. The students will be enabled to set up manufacturing processes for the manufacture of any semiconductor components and to analyse, explain and, if necessary, improve given manufacturing processes.

General Conditions

Credit Points (LP) 6
Semester hours per week (SWS) 4   (exercise 2, lecture 2)
Cycle Winter semester
Language German
Estimation of workload Attendance time· 45 hours
Private study· 135 hours
Sum· 180 hours

Contact

Classification in the curriculum

The lecture Semiconductor Technology: Epitaxy (HLT II) belongs to the lectures

  • Semiconductor Technology: Process Technology (HLT I) and
  • Semiconductor technology: Semiconductor production technology (HLT III)

to the semiconductor technology cycle of the IHT. The lecture is offered every second semester, always in the summer semester.

Recommended requirements

Knowledge is recommended, such as that provided in microelectronics (ME) and Semiconductor Technology: Process Technology (HLT I).

Contents

The following contents will be discussed:

  1. Epitaxial growth and heteroepitaxy,
  2. Atomic understanding of growth (adsorption, nucleation, step migration, desorption),
  3. Crystal lattice, dislocations, stacking errors, detection methods,
  4. Molecular beam epitaxy, subsystems and process flow,
  5. Doping strategies for nanometer structures,
  6. Surface segregation,
  7. Lattice mismatched interfaces, pseudomorphic growth, virtual substrates.

Learning Goals

The students have the knowledge for the production of epitaxial dopant structures by molecular beam epitaxy and are able to estimate the influence of process parameters on the production of epitaxial structures and heterostructures. In addition, they have basic knowledge of ultra-high vacuum technology and know and master layer analytical methods, such as

  • Profilometry,
  • 4-peak measurement,
  • Ellipsometry,
  • RAMAN spectroscopy,
  • Hall measurement and
  • Scanning electron microscopy

for the determination of layer thicknesses, stress states, dopant concentrations and dopant type.

General Conditions

Credit Points (LP) 6
Semester hours per week (SWS) 4   (exercise 2, lecture 2)
Cycle Summer semester
Language German
Estimation of workload Attendance time· 45 hours
Private study· 135 hours
Sum· 180 hours

Contact

 
Lecturer

Dr. Michael Oehme

Assistant

Daniel Schwarz, M.Sc.

This course is currently not provided.

This course is currently not provided.

Contact

This image shows Michael Oehme

Michael Oehme

Dr.

Academic Senior Counsellor
Vice Director

This image shows Cinja Schwiedel

Cinja Schwiedel

 

Assistant to the institute´s management

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