Professional Meetings

In which conferences and workshops does the IHT participate?

  1. 2022

    1. M. Wanitzek, M. Oehme, C. Spieth, D. Schwarz, L. Seidel, and J. Schulze, “GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection,” in ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC), in ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC). Sep. 2022, pp. 169–172. doi: 10.1109/ESSCIRC55480.2022.9911363.
    2. L. Seidel et al., “Electroluminescence of SiGeSn/GeSn pin-Diodes Grown on a GeSn Buffer,” in ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC), in ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC). Sep. 2022, pp. 165–168. doi: 10.1109/ESSCIRC55480.2022.9911458.
    3. D. Schwarz, J. Ziegler, H. S. Funk, J. Schulze, and M. Oehme, “Hydrogen-Assisted Molecular Beam Epitaxy of SiGeSn,” ECS Meeting Abstracts, vol. MA2022-02, no. 32, Art. no. 32, Oct. 2022, doi: 10.1149/MA2022-02321164mtgabs.
    4. M. Oehme et al., “Monolithic Integration of Gesn on Si for IR Camera Demonstration,” ECS Meeting Abstracts, vol. MA2022-02, no. 32, Art. no. 32, Oct. 2022, doi: 10.1149/MA2022-02321169mtgabs.
    5. B. Marzban et al., “Modeling and design of an electrically pumped SiGeSn microring laser,” in Silicon Photonics XVII, G. T. Reed and A. P. Knights, Eds., in Silicon Photonics XVII. SPIE, Mar. 2022. doi: 10.1117/12.2609537.
    6. S. Choudhary, D. Schwarz, H. S. Funk, K. P. Sharma, S. K. Sharma, and J. Schulze, “Process Optimizations for Ge-On-Si Depletion Mode Transistors Using Mesa Architecture,” in 2022 International Symposium on Semiconductor Manufacturing (ISSM), in 2022 International Symposium on Semiconductor Manufacturing (ISSM). Dec. 2022, pp. 1–4. doi: 10.1109/ISSM55802.2022.10027013.
    7. D. Buca, M. El kurdi, J. Witzens, M. Oehme, G. Capellini, and D. Gruetzmacher, “Gesn Alloys: From Optical to Electrical Pumped Lasers,” ECS Meeting Abstracts, vol. MA2022-02, no. 32, Art. no. 32, Oct. 2022, doi: 10.1149/MA2022-02321166mtgabs.

  2. 2021

    1. D. Weißhaupt et al., “Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics,” in 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), in 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO). Sep. 2021, pp. 45–49. doi: 10.23919/MIPRO52101.2021.9596924.
    2. E. Sigle et al., “Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy,” in 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), in 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO). Sep. 2021, pp. 40–44. doi: 10.23919/MIPRO52101.2021.9597145.
    3. L. Seidel et al., “Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures,” in 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), in 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO). Sep. 2021, pp. 55–59. doi: 10.23919/MIPRO52101.2021.9597082.
    4. D. Schwarz et al., “MBE-Grown Ge0.92Sn0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge0.92Sn0.08 Substrate,” in 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), in 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO). Sep. 2021, pp. 50–54. doi: 10.23919/MIPRO52101.2021.9596634.
    5. M. Oehme et al., “Ge-on-Si camera for NIR detection,” in 2021 IEEE 17th International Conference on Group IV Photonics (GFP), in 2021 IEEE 17th International Conference on Group IV Photonics (GFP). Dec. 2021, pp. 1–2. doi: 10.1109/GFP51802.2021.9673939.
    6. H. S. Funk, D. Weißhaupt, D. Schwarz, D. Bloos, J. Van Slageren, and J. Schulze, “Characterization of Fe Micromagnets for Semiconductor Spintronics by In-Field Magnetic Force Microscopy,” in 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), in 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO). Sep. 2021, pp. 31–35. doi: 10.23919/MIPRO52101.2021.9596763.
    7. F. Berkmann, M. Ayasse, F. Mörz, I. A. Fischer, and J. Schulze, “Titanium and Nickel as alternative materials for mid Infrared Plasmonic,” in 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), in 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO). Sep. 2021, pp. 36–39. doi: 10.23919/MIPRO52101.2021.9597155.

  3. 2020

    1. M. M. Dettling et al., “Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers,” in 2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO), in 2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO). Sep. 2020, pp. 17–21. doi: 10.23919/MIPRO48935.2020.9245273.

  4. 2019

    1. M. C. J. Weiser et al., “Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy,” in 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), in 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). May 2019, pp. 1–6. doi: 10.23919/MIPRO.2019.8756640.
    2. D. Schwarz, M. Oehme, and J. Schulze, “Alloy Stability of Ge1−xSnx with Sn Concentrations up to 15% Utilizing Low-Temperature Molecular Beam Epitaxy,” 2019.
    3. P. Povolni et al., “Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well,” in 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), in 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). May 2019, pp. 1–6. doi: 10.23919/MIPRO.2019.8757211.
    4. A.-C. Köllner et al., “A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector,” in 2019 IEEE SENSORS, in 2019 IEEE SENSORS. Oct. 2019, pp. 1–4. doi: 10.1109/SENSORS43011.2019.8956731.
    5. L. Gebert, D. Schwarz, A. Elsayed, and J. Schulze, “Electrical Characterization of pure Boron-on-Germanium pin Diodes,” in 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), in 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). May 2019, pp. 13–18. doi: 10.23919/MIPRO.2019.8757123.
    6. H. S. Funk et al., “Magnetic Characterization of a Mn Based Ferromagnet on SixGe(1-x-y)Sny with High Sn Content,” The Electrochemical Society Transactions, vol. 93, no. 1, Art. no. 1, 2019, doi: 10.1149/09301.0101ecst.
    7. J. F. Dick, A. Elsayed, D. Schwarz, and J. Schulze, “Electrical Characterization of Low-Temperature Boron on Silicon Deposition utilizing Molecular Beam Epitaxy,” in 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), in 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). May 2019, pp. 19–23. doi: 10.23919/MIPRO.2019.8756927.

Contact

This image shows Michael Oehme

Michael Oehme

Dr.

Academic Senior Counsellor
Vice Director

This image shows Cinja Schwiedel

Cinja Schwiedel

 

Assistant to the institute´s management

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