Professional Meetings

In which conferences and workshops does the IHT participate?

  1. 2019

    1. M. C. J. Weiser et al., “Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy,” in 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2019, pp. 1–6.
    2. P. Povolni et al., “Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well,” in 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2019, pp. 1–6.
    3. L. Gebert, D. Schwarz, A. Elsayed, and J. Schulze, “Electrical Characterization of pure Boron-on-Germanium pin Diodes,” in 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2019, pp. 13–18.
    4. J. F. Dick, A. Elsayed, D. Schwarz, and J. Schulze, “Electrical Characterization of Low-Temperature Boron on Silicon Deposition utilizing Molecular Beam Epitaxy,” in 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2019, pp. 19–23.
  2. 2018

    1. J. Schlipf et al., “FDTD simulation of enhanced Faraday effect in plasmonic composite structures with rectangularly arranged Au particles.,” in 2018 IEEE International Magnetic Conference (INTERMAG), 2018, pp. 1–2.
    2. M. Oehme, D. Schwarz, J. Schulze, C. J. Clausen, and I. A. Fischer, “SiGeSn material for integrated optical devices,” in Silicon Photonics: From Fundamental Research to Manufacturing, 2018.
    3. Y. Kawaguchi, L. Augel, H. Uchida, M. Inoue, J. Schulze, and I. A. Fischer, “Simulation-based optimization of Ge-PIN-photodiodes with Al nanohole arrays for refractive index sensing,” in 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2018, pp. 0023–0026.
    4. L. A. Hänel, Y. Elogail, D. Schwarz, I. A. Fischer, and J. Schulze, “Performance of C6H8O7-treated and H- and Cl-passivated Ge-MOS-capacitances on Ge-virtual-substrate on Si(001),” in 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2018, pp. 0027–0031.
    5. C. J. Clausen et al., “Tunnel Injection into Group IV Semiconductors and its Application to Light-Emitting Devices,” in 2018 IEEE Photonics Society Summer Topical Meeting Series (SUM), 2018, pp. 29–30.
    6. F. Berkmann et al., “Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates,” in 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2018, pp. 0032–0035.
  3. 2017

    1. D. Weisshaupt, P. Jahandar, G. Colston, P. Allred, J. Schulze, and M. Myronov, “Impact of Sn segregation on Ge1−xSnx epi-layers growth by RP-CVD,” in 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2017, pp. 43–47.
    2. B. Schwartz, M. Oehme, R. Koerner, S. Bechler, J. Schulze, and M. Kittler, “Luminescence of strained Ge on GeSn virtual substrate grown on Si (001),” in Silicon Photonics XII, 2017.
    3. J. Schlipf, J. L. Frieiro, I. A. Fischer, C. Serra, J. Schulze, and S. Chiussi, “Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy,” in 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2017, pp. 37–42.
    4. R. Koerner, I. A. Fischer, M. Oehme, C. Clausen, and J. Schulze, “Zener tunnel-injection for Ge optical amplifiers, lasers and modulators (invited),” in 2017 IEEE 14th International Conference on Group IV Photonics (GFP), 2017, pp. 11–12.
    5. L. Augel, R. Körner, S. Bechler, J. Schulze, and I. A. Fischer, “Ge PIN photodetectors with nanohole arrays for refractive index sensing,” in 2017 IEEE 14th International Conference on Group IV Photonics (GFP), 2017, pp. 161–162.
  4. 2016

    1. W. Zhang et al., “Small-signal IMPATT diode characterization for mm-wave power generation in monolithic scenarios,” in 2016 46th European Solid-State Device Research Conference (ESSDERC), 2016, pp. 109–112.
    2. R. Koerner et al., “The Zener-Emitter: Electron injection by direct-tunneling in Ge LEDs for the on-chip Si light source,” in 2016 74th Annual Device Research Conference (DRC), 2016, pp. 1–2.
    3. R. Koerner et al., “The Zener-Emitter: A novel superluminescent Ge optical waveguide-amplifier with 4.7 dB gain at 92 mA based on free-carrier modulation by direct Zener tunneling monolithically integrated on Si,” in 2016 IEEE International Electron Devices Meeting (IEDM), 2016, pp. 22.5.1-22.5.4.
    4. I. A. Fischer, F. Oliveira, A. Benedetti, S. Chiussi, and J. Schulze, “(Si)GeSn nanostructures for optoelectronic device applications,” in 2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2016, pp. 1–4.
    5. L. Augel et al., “Plasmonic nanohole arrays on Si-Ge heterostructures: an approach for integrated biosensors,” in Plasmonics in Biology and Medicine XIII, 2016.
  5. 2015

    1. W. Zhang et al., “Systematic characterization of Silicon IMPATT diode for Monolithic E-band amplifier design,” in 2015 German Microwave Conference, 2015, pp. 135–138.
    2. B. Schwartz et al., “Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers,” in Silicon Photonics X, 2015.
    3. E. Kasper and M. Oehme, “Germanium tin light emitters on silicon,” JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 54, no. 4, SI, 2015.
    4. E. Kasper and W. Zhang, “SIMMWIC integration of millimeter-wave antenna with two terminal devices for medical applications,” in 2015 IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2015, pp. 1–3.
    5. I. A. Fischer, L. Augel, S. Jitpakdeebodin, N. Franz, S. Fleischer, and J. Schulze, “Plasmonics-integrated Ge PIN-photodetectors: efficiency enhancement by Al nanoantennas and plasmon detection,” in International Conference on Optics and Photonics 2015, 2015.
  6. 2014

    1. W. Zhang et al., “A reliable 40 GHz opto-electrical system for characterization of frequency response of Ge PIN photo detectors,” in 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014, pp. 117–118.

Contact

Jörg Schulze
Prof. Dr. habil.

Jörg Schulze

Head of Institute

Cinja Schwiedel
 

Cinja Schwiedel

Assistant to the institute´s management

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