Am Freitag den 01. Februar setzt sich das IHT-Kolloquium fort, es spricht:
Prof. Dr. Yasuhiko Ishikawa
Integrated Photonic Device Group,
Department of Electrical & Electronic Information Engineering,
Toyohashi University of Technology, Japan
„Photonic Device Applications of Ge Layers Epitaxially Grown on Si”
Our recent progresses are presented on waveguide-integrated vertical pin PDs of Ge layers epitaxially grown on Si-on-insulator wafers by chemical vapor deposition from the viewpoint of near-infrared optical communications. Ge PDs reveal high responsivity of ~1 A/W at 1.55 µm, high operation frequency of 30 GHz, and low leakage current below 0.1 uA. Strain engineering to control the operation wavelength of Ge photonic devices is also presented as well as n-type doped Ge toward light emitters.