IHT-Kolloquium "Bauelemente und Technologien"

February 1, 2019, 10:00 a.m. (CET)

Prof. Dr. Yasuhiko Ishikawa - Photonic Device Applications of Ge Layers Epitaxially Grown on Si

Time: February 1, 2019, 10:00 a.m. – 11:00 a.m.
Venue: Universtität Stuttgart
Institut für Halbleitertechnik
Seminarraum des IHTs - Raum 1.444
Pfaffenwaldring 47
70569  Stuttgart
Phone: +49 711 685 68003

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Am Freitag den 01. Februar setzt sich das IHT-Kolloquium fort, es spricht:

Prof. Dr. Yasuhiko Ishikawa

Integrated Photonic Device Group,

Department of Electrical & Electronic Information Engineering,

Toyohashi University of Technology, Japan

zum Thema:

„Photonic Device Applications of Ge Layers Epitaxially Grown on Si”


Our recent progresses are presented on waveguide-integrated vertical pin PDs of Ge layers epitaxially grown on Si-on-insulator wafers by chemical vapor deposition from the viewpoint of near-infrared optical communications. Ge PDs reveal high responsivity of ~1 A/W at 1.55 µm, high operation frequency of 30 GHz, and low leakage current below 0.1 uA. Strain engineering to control the operation wavelength of Ge photonic devices is also presented as well as n-type doped Ge toward light emitters.

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