| Zeit: | 1. Februar 2019, 10:00 – 11:00 Uhr |
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| Veranstaltungsort: | Universtität Stuttgart Institut für Halbleitertechnik Seminarraum des IHTs - Raum 1.444 Pfaffenwaldring 47 70569 Stuttgart Telefon: +49 711 685 68003 |
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Am Freitag den 01. Februar setzt sich das IHT-Kolloquium fort, es spricht:
Prof. Dr. Yasuhiko Ishikawa
Integrated Photonic Device Group,
Department of Electrical & Electronic Information Engineering,
Toyohashi University of Technology, Japan
zum Thema:
„Photonic Device Applications of Ge Layers Epitaxially Grown on Si”
Abstract
Our recent progresses are presented on waveguide-integrated vertical pin PDs of Ge layers epitaxially grown on Si-on-insulator wafers by chemical vapor deposition from the viewpoint of near-infrared optical communications. Ge PDs reveal high responsivity of ~1 A/W at 1.55 µm, high operation frequency of 30 GHz, and low leakage current below 0.1 uA. Strain engineering to control the operation wavelength of Ge photonic devices is also presented as well as n-type doped Ge toward light emitters.