Journal Publications

What does the IHT publish?

This page is currently being edited. If you have any questions about current publications, please contact the persons listed below.

  1. 2020

    1. Schlykow, Viktoria; Manganelli, Costanza Lucia; Römer, Friedhard; u. a. (2020): „Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas“. In: Nanotechnology. IOP Publishing (Nanotechnology), 31 (34), S. 345203, doi: 10.1088/1361-6528/ab91ef.
  2. 2019

    1. Weiser, Mathias C. J.; Schwarz, D.; Funk, H. S.; u. a. (2019): „Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy“. In: 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). (2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 1–6, doi: 10.23919/MIPRO.2019.8756640.
    2. Povolni, P.; Schwarz, D.; Clausen, C. J.; u. a. (2019): „Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well“. In: 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). (2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 1–6, doi: 10.23919/MIPRO.2019.8757211.
    3. Gebert, L.; Schwarz, D.; Elsayed, A.; u. a. (2019): „Electrical Characterization of pure Boron-on-Germanium pin Diodes“. In: 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). (2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 13–18, doi: 10.23919/MIPRO.2019.8757123.
    4. Dick, Jan F.; Elsayed, A.; Schwarz, D.; u. a. (2019): „Electrical Characterization of Low-Temperature Boron on Silicon Deposition utilizing Molecular Beam Epitaxy“. In: 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). (2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 19–23, doi: 10.23919/MIPRO.2019.8756927.
    5. Das, B.; Lele, A.; Kumbhare, P.; u. a. (2019): „PrxCa1–xMnO3-Based Memory and Si Time-Keeping Selector for Area and Energy Efficient Synapse“. In: IEEE Electron Device Letters. (IEEE Electron Device Letters), 40 (6), S. 850–853, doi: 10.1109/LED.2019.2914406.
  3. 2018

    1. Zhang, W.; Kasper, E.; Schulze, J. (2018): „An 82-GHz 14.6-mW Output Power Silicon Impact Ionization Avalanche Transit Time Transmitter With Monolithically Integrated Coplanar Waveguide Patch Antenna“. In: IEEE Transactions on Microwave Theory and Techniques. (IEEE Transactions on Microwave Theory and Techniques), S. 1–10, doi: 10.1109/TMTT.2018.2876220.
    2. Vasin, A. S.; Oliveira, F; Cerqueira, M. F.; u. a. (2018): „Structural and vibrational properties of SnxGe1-x: Modeling and experiments“. In: Journal of Applied Physics. American Institute of Physics (Journal of Applied Physics), 124 (3), S. 035105--, doi: 10.1063/1.5030104.
    3. Schlipf, J.; Itabashi, Y.; Goto, T.; u. a. (2018): „FDTD simulation of enhanced Faraday effect in plasmonic composite structures with rectangularly arranged Au particles.“. In: 2018 IEEE International Magnetic Conference (INTERMAG). (2018 IEEE International Magnetic Conference (INTERMAG)), S. 1–2, doi: 10.1109/INTMAG.2018.8508694.
    4. Prucnal, S; Berencén, Y; Wang, M; u. a. (2018): „Ex situ n + doping of GeSn alloys via non-equilibrium processing“. In: Semiconductor Science and Technology. (Semiconductor Science and Technology), 33 (6), S. 065008, doi: 10.1088/1361-6641/aabe05.
    5. Oehme, Michael; Schwarz, D.; Schulze, Jörg; u. a. (2018): „SiGeSn material for integrated optical devices“. In: Silicon Photonics: From Fundamental Research to Manufacturing. SPIE (Silicon Photonics: From Fundamental Research to Manufacturing), doi: 10.1117/12.2318011.
    6. Koerner, R.; Fischer, I. A.; Schwarz, D.; u. a. (2018): „Engineering of Germanium Tunnel Junctions for Optical Applications“. In: IEEE Photonics Journal. (IEEE Photonics Journal), 10 (2), S. 1–12, doi: 10.1109/JPHOT.2018.2818662.
    7. Kawaguchi, Y.; Augel, L.; Uchida, H.; u. a. (2018): „Simulation-based optimization of Ge-PIN-photodiodes with Al nanohole arrays for refractive index sensing“. In: 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). (2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 0023–0026, doi: 10.23919/MIPRO.2018.8400004.
    8. Jahandar, Pedram; Weisshaupt, David; Colston, Gerard; u. a. (2018): „The effect of Ge precursor on the heteroepitaxy of Ge 1− x Sn x epilayers on a Si (001) substrate“. In: Semiconductor Science and Technology. (Semiconductor Science and Technology), 33 (3), S. 034003.
    9. Hänel, L. A.; Elogail, Y.; Schwarz, D.; u. a. (2018): „Performance of C6H8O7-treated and H- and Cl-passivated Ge-MOS-capacitances on Ge-virtual-substrate on Si(001)“. In: 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). (2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 0027–0031, doi: 10.23919/MIPRO.2018.8400005.
    10. Elogail, Yasmine; Fischer, Inga A; Wendav, Torsten; u. a. (2018): „Enhancement of Ge-based p-channel vertical FET performance by channel engineering using planar doping and a Ge/Si x Ge 1– x – y Sn y heterostructure model for low power FET applications“. In: Semiconductor Science and Technology. (Semiconductor Science and Technology), 33 (11), S. 114001, doi: 10.1088/1361-6641/aae001.
    11. Das, B.; Schulze, J.; Ganguly, U. (2018a): „Transient Phenomena in Sub-Bandgap Impact Ionization in Si n-i-p-i-n Diode“. In: IEEE Transactions on Electron Devices. (IEEE Transactions on Electron Devices), 65 (8), S. 3414–3420, doi: 10.1109/TED.2018.2846360.
    12. Das, B.; Schulze, J.; Ganguly, U. (2018b): „Ultra-Low Energy LIF Neuron Using Si NIPIN Diode for Spiking Neural Networks“. In: IEEE Electron Device Letters. (IEEE Electron Device Letters), 39 (12), S. 1832–1835, doi: 10.1109/LED.2018.2876684.
    13. Clausen, Caterina J; Fischer, Inga A; Weisshaupt, David; u. a. (2018b): „Electrical characterization of n-doped SiGeSn diodes with high Sn content“. In: Semiconductor Science and Technology. (Semiconductor Science and Technology), 33 (12), S. 124017, doi: https://doi.org/10.1088/1361-6641/aae3ab.
    14. Clausen, C. J.; Fischer, I. A.; Hoppe, N.; u. a. (2018a): „Tunnel Injection into Group IV Semiconductors and its Application to Light-Emitting Devices“. In: 2018 IEEE Photonics Society Summer Topical Meeting Series (SUM). (2018 IEEE Photonics Society Summer Topical Meeting Series (SUM)), S. 29–30, doi: 10.1109/PHOSST.2018.8456688.
    15. Berkmann, F.; Augel, L.; Schilling, M. B.; u. a. (2018): „Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates“. In: 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). (2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 0032–0035, doi: 10.23919/MIPRO.2018.8400006.
    16. Bechler, Stefan; Kern, Michal; Funk, Hannes Simon; u. a. (2018): „Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111)“. In: Semiconductor Science and Technology. (Semiconductor Science and Technology), 33 (9), S. 095008, doi: https://doi.org/10.1088/1361-6641/aad4cf.
    17. Augel, Lion; Kawaguchi, Yuma; Bechler, Stefan; u. a. (2018): „Integrated Collinear Refractive Index Sensor with Ge PIN Photodiodes“. In: ACS Photonics. American Chemical Society (ACS) (ACS Photonics), doi: 10.1021/acsphotonics.8b01067.

L. Augel, F. Berkmann, D. Latta, I. A. Fischer, S. Bechler, Y. Elogail, K. Kostecki, K. Potje-Kamloth, J, Schulze, " Optofluidic sensor system with Ge PIN photodetector for CMOS-compatible sensing”, Microfluidics and Nanofluidics 21 (11), 169 (2017)

I. A. Fischer, A. Berrier, F. Hornung, M. Oehme, P. Zaumseil, G. Capellini, N. von den Driesch, D. Buca, J. Schulze, “Optical Critical Points of SixGe1-x-ySny alloys with high Si content”, Semicond. Sci. Technol. 32 124004 (2017)

R Koerner, I A Fischer, D Schwarz, C Clausen, M Oehme and J Schulze "MBE Grown Germanium Tunnel-Junctions–Burstein-Moss Effect and Band-Edge Luminescence in the Ge Zener-Emitter”, Semicond. Sci. Technol. 32 124005 (2017)

L. Augel, R. Körner, S. Bechler, J. Schulze, I. A. Fischer, " Ge PIN photodetectors with nanohole arrays for refractive index sensing”, 2017 IEEE 14th International Conference on Group IV Photonics (GFP), 161-162 (2017)

R. Koerner, I. A. Fischer, M. Oehme, C. Clausen, J. Schulze, “Zener tunnel-injection for Ge optical amplifiers, lasers and modulators”, 2017 IEEE 14th International Conference on Group IV Photonics (GFP), 11-12 (2017)

I. A. Fischer, L. Augel, A. Berrier, M. Oehme, J. Schulze, "(Si)GeSn plasmonics“, IEEE Photonics Society Summer Topical Meeting Series (SUM), 15-16 (2017)

D. Weisshaupt, P. Jahandar, G. Colston, P. Allred, J. Schulze and M. Myronov, "Impact of Sn segregation on Ge1−xSnx epi-layers growth by RP-CVD," 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), Opatija, 2017, pp. 43-47. doi: 10.23919/MIPRO.2017.7973388

H. S. Funk, J. Ng, N. Kamimura, Y. H. Xie and J. Schulze, "Local growth of graphene on Cu and Cu0.88Ni0.12 foil substrates," 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), Opatija, 2017, pp. 31-36. doi: 10.23919/MIPRO.2017.7973386

J. Schlipf, J. L. Frieiro, I. A. Fischer, C. Serra, J. Schulze and S. Chiussi, "Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy," 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), Opatija, 2017, pp. 37-42. doi: 10.23919/MIPRO.2017.7973387

E. G. Rolseth et al., "Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges," 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), Opatija, 2017, pp. 57-65. doi: 10.23919/MIPRO.2017.7973391

T. Wendav, I. A. Fischer, M. Virgilio, G. Capellini, F. Oliveira, M. F. Cerqueira, A. Benedetti, S. Chiussi, P. Zaumseil, B. Schwartz, K. Busch, and J. Schulze, “Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling”, Physical Review B 94 (24), 245304 (2016)

L. Augel, I. A. Fischer, F. Hornung, M. Dressel, A. Berrier, M. Oehme, and J. Schulze, “Ellipsometric investigation of doped Ge0.95Sn0.05 films in the mid infrared range for plasmonic applications”, Optics Letters 41 (18), 4398 (2016)

L.-T. Chang, I. A. Fischer, J. Tang, C.-Y. Wang, G. Yu, Y. Fan, K. Murata, T. Nie, M. Oehme, J. Schulze, and K. Wang, "Electrical detection of spin transport in Si two-dimensional electron gas systems“, Nanotechnology 27, 365701 (2016)

V. S. S. Srinivasan, I. A. Fischer, L. Augel, A. Hornung, R. Koerner, K. Kostecki, M. Oehme, E. Rolseth, and J. Schulze, "Contact resistivities of antimony-doped n type Ge1-xSnx”, Semicond. Sci. Technol. 31, 08LT01 (2016)

T. Wendav, I. A. Fischer, M. Montanari, M. H. Zoellner, W. Klesse, G. Capellini, N. von den Driesch, M. Oehme, D. Buca, T. Schroeder, K. Busch, and J. Schulze, “Compositional dependence of the direct band gap of Ge1-x-ySixSny alloys”, Appl. Phys. Lett. 108 (24), 242104 (2016)

I. A. Fischer, F. Oliveira, A. Benedetti, S. Chiussi, and J. Schulze, “(Si)GeSn Nanostructures for Optoelectronic Device Applications”, Proceedings of the 39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2016; doi: 10.1109/MIPRO.2016.7522099

R. Koerner, M. Oehme, K. Kostecki, I. A. Fischer, E. Rolseth, S. Bechler, M. Yorgidis, A. Blech, O. Latzl, and J. Schulze, “The Zener-Emitter: Electron injection by direct-tunneling in Ge LEDs for the on-chip Si light source”, 74th Annual Device Research Conference (DRC), 2016; doi: 10.1109/DRC.2016.7548478 (2016)

W. Zhang, M. Oehme, K. Matthies, V. Stefani, A. I. Raju, E. Kasper, and J. Schulze, "Small-Signal IMPATT Diode Characterization for mm-Wave Power Generation in Monolithic Scenarios," ESSDERC-ESSCIRC 2016/ Lausanne/ Switzerland, Conference Proceedings, pp. 109-112 , Sep. 2016

W. Zhang, Y. Yamamoto, M. Oehme, K. Matthies, A. I. Raju, V.S. S. Srinivasan, R. Körner, M. Gollhofer, S. Bechler, H. Funk, B. Tillack, E. Kasper, and J. Schulze, "S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode," Japanese Journal of Applied Physics (JJAP), vol. 55, no. 4S, pp. 04EF03:1-6, Mar. 2016

W. Zhang, M. Oehme, K. Kostecki, K. Matthies, V. Stefani, A. I. Raju, D. Noll, V.S. S. Srinivasan, R. Körner, E. Kasper, and J. Schulze, "S-parameter based device-level C-V measurement of p-i-n single-drift IMPATT diode for millimeter-wave applications," International Wireless Symposium (IWS), 2016 IEEE MTT-S, TU2D-2, Mar. 2016

L. Augel, I. A. Fischer, L. A. Dunbar, S. Bechler, A. Berrier, D. Etezadi, F. Hornung, K. Kostecki, C. I. Ozdemir, M. Soler, H. Altug und J. Schulze, "Plasmonic nanohole arrays on Si-Ge heterostructures: an approach for integrated biosensors", Proc. SPIE 9724, Plasmonics in Biology and Medicine XIII, 2016; doi:10.1117/12.2212650

I. A. Fischer, L. Augel, T. Kropp, S. Jitpakdeebodin, N. Franz, F. Oliveira, E. Rolseth, T. Maß, T. Taubner, und J. Schulze, "Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of nanoantenna size on light scattering into waveguide modes", Appl. Phys. Lett. 108, 71108 (2016)

R. Koerner, D. Schwarz, I. Fischer, L. Augel, S. Bechler, L. Haenel, M. Kern, M. Oehme, E. Rolseth, B. Schwartz*, D. Weisshaupt, W. Zhang und J. Schulze, “The Zener-Emitter: A Novel Superluminescent Ge Optical Waveguide-Amplifier with 4.7 dB Gain at 92 mA Based on Free-Carrier Modulation by Direct Zener Tunneling Monolithically Integrated on Si” , Electron Devices Meeting (IEDM), 2016 IEEE International, 2016, pp. 22.5.

F. Oliveira, I. A. Fischer, A. Benedetti, P. Zaumseil, M. F. Cerqueira, M. I. Vasilevskiy, S. Stefanov, S. Chiussi, und J. Schulze, "Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy", Appl. Phys. Lett. 107, 262102 (2015)

W. Zhang and Y. Yamamoto, M. Oehme, K. Matthies, B. Tillack, E. Kasper, J. Schulze, "S-Parameter Characterization and Lumped-Element Modelling of mm-Wave Single-Drift IMPATT Diode", Extended Abstracts of the 47th International Conference on Solid State Devices and Materials (SSDM), Sapporo/ Japan, pp. 802-803, 2015

I. A. Fischer, T. Wendav, L. Augel, S. Jitpakdeebodin, F. Oliveira, A. Benedetti, S. Stefanov, S. Chiussi, G. Capellini, K. Busch, J. Schulze, "Growth and Characterization of SiGeSn Quantum Well Photodiodes", Opt. Express 23, 25048-25057 (2015)

I. A. Fischer, L. Augel, S. Jitpakdeebodin, N. Franz, S. Fleischer, J. Schulze, "Plasmonics-integrated Ge-PIN-Photodetectors: Efficiency Enhancement by Al Nanoantennas and Plasmon Detection”, Proc. SPIE 9654, International Conference on Optics and Photonics 2015, 965404 (2015)

J. Schulze, A. Blech, A. Datta, I. A. Fischer, D. Hähnel, S. Naasz, E. Rolseth und E.-M. Tropper, "Vertical Ge and GeSn Heterojunction Gate-All-Around Tunneling Field Effect Transistors", Solid State Electron. 110, 59–64 (2015)

F. Oliveira, I. A. Fischer, S. Stefanov, A. Benedetti, F. Cerqueira, S. Ferdov, M. Vasilevskiy, S. Chiussi und J. Schulze, "Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis", J. Appl. Phys. 117, 125706 (2015)

R. Koerner, M. Oehme, M. Gollhofer, M. Schmid, K. Kostecki, S. Bechler, D. Widmann, E. Kasper, and J. Schulze, "Electrically pumped lasing from Ge Fabry-Perot resonators on Si", Optics Express Vol. 23, No. 11, pp. 14815-14822 (2015)

B. Schwartz, M. Oehme, K. Kostecki, D. Widmann, M. Gollhofer, R. Koerner, S. Bechler, I.A. Fischer, T. Wendav, E. Kasper, J. Schulze, and M. Kittler, "Electroluminescence of GeSn/Ge MQW LEDs on Si substrate", Opt. Lett. 40, pp. 3209-3212 (2015)

M. Steglich, M. Oehme, T. Käsebier, M. Zilk, K. Kostecki, E.-B. Kley, J. Schulze and A. Tünnermann, "Ge-on-Si photodiode with black silicon boosted responsivity", Appl. Phys. Lett. 107, 051103 (2015)

E. Kasper and W. Zhang, "SIMMWIC integration of millimeter-wave antenna with two terminal devices for medical applications", 2015 IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems(SiRF2015),DIGEST OF PAPERS(2015)1-3, DOI:10.1109/SIRF.2015.7119855

W. Zhang, M. Oehme, K. Kostecki, K. Matthies, V. Stefani, E. Kasper and J. Schulze, "Systematic Characterization of Silicon IMPATT Diode for Monolithic E-band Amplifier Design", 2015 IEEE German Microwave Conference (GeMiC2015), DIGEST OF PAPERS(2015)135-138, DOI: 10.1109/GEMIC.2015.7107771

E. Kasper and M. Oehme, "Germanium tin light emitters on silicon", Japanese Journal of Applied Physics 54, 04DG11 (2015)

K. Ye, W. Zhang, M. Oehme, M. Schmid, M. Gollhofer, K. Kostecki, D. Widmann, R. Koerner, E. Kasper and J. Schulze, "Extraction of GeSn Absorption Coefficients from Photodectector Response", Solid-State Electronics 110, pp. 71–75 (2015)

B. Schwartz, T. Arguirov, M. Kittler, M. Oehme, K. Kostecki, E. Kasper, J. Schulze, "Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers", Proc. of SPIE 2015 Vol. 9367 93671H-1

I. A. Fischer, L.-T. Chang, C. Sürgers, E. Rolseth, S. Reiter, S. Stefanov, S. Chiussi, J. Tang, K. L. Wang, J. Schulze, "Hanle-effect measurements of spin injection from Mn5Ge3C8/Al2O3-contacts into degenerately doped Ge channels on Si", Appl. Phys. Lett. 105, 222408 (2014)

D. Hähnel, I. A. Fischer, A. Hornung, A.-C. Köllner und J. Schulze, "Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel and Sn Content", IEEE Trans. Electron Dev. 62, 36 (2014)

K. Kostecki, M. Oehme, R. Koerner, D. Widmann, M. Gollhofer, S. Bechler, G. Mussler, D. Buca, E. Kasper, J. Schulze, "Virtual Substrate Technology for Ge1-XSnX Heteroepitaxy on Si Substrates", ECS Trans. 2014 volume 64, issue 6, 811-818

W. Zhang, K. Ye, S. Bechler, K. Ulbricht, M. Oehme, E. Kasper and J. Schulze, "A Reliable 40 GHz Opto-Electrical System for Characterization of Frequency Response of Ge PIN Photo Detectors", Proceeding on 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), Singapore, Singapore, 145-146 (2014)

K. Ye, W. Zhang, M. Oehme, M. Schmid, M. Gollhofer, K. Kostecki, D. Widmann, R. Koerner, E. Kasper and J. Schulze, "Extraction of GeSn Absorption Coefficients from Photodectector Response", Proceeding on 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), Singapore, Singapore, 167-168 (2014)

W. Zhang, E. Kasper, M. Oehme, M. Kaschel, V. Stefani and J. Schulze, "A Monolithic Integrated 85 GHz Schottky Rectenna with Dynamic Tuning Range of the Conversion Voltage", 2014 IEEE International Symposium on Radio-Frequency Integration Technologie (RFIT), Hefei, China, TH1A-2 (2014)

M. Oehme, D. Widmann, K. Kostecki, P. Zaumseil, B. Schwartz, M. Gollhofer, R. Koerner, S. Bechler, M. Kittler, E. Kasper, and J. Schulze, "GeSn/Ge multi quantum well photodetectors on Si substrates", Opt. Lett. 39, pp. 4711-4714 (2014)

M. Oehme, K. Kostecki, M. Schmid, M. Kaschel, M. Gollhofer, K. Ye, D. Widmann, R. Koerner, S. Bechler, E. Kasper and J. Schulze, "Franz-Keldysh effect in GeSn pin photodetectors", Appl. Phys. Lett., 104, 161115 (2014) (4 pages)

M. Oehme, K. Kostecki, M. Schmid, F. Oliveira, E. Kasper, and J. Schulze, "Epitaxial growth of strained and unstrained GeSn alloys up to 25 % Sn", Thin Solid Films, 557, pp. 169-172 (2014)

M. Schmid M. Oehme, M. Gollhofer, R. Koerner, M. Kaschel, E. Kasper, J. Schulze, "Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes", Thin Solid Films, 557, pp. 351-354 (2014)

M. Oehme, K. Kostecki, K. Ye, S. Bechler, K. Ulbricht, M. Schmid, M. Kaschel, M. Gollhofer, R. Körner, W. Zhang, E. Kasper, and J. Schulze, "GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz", Optics Express Vol. 22, No. 1, pp. 839-846 (2014)

M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, J. Schulze, "GeSn heterojunction LEDs on Si substrates", IEEE Phot. Techn. Lett., Vol. 26, No. 2, pp. 187-189 (2014)

I. A. Fischer, C. Sürgers, M. Petit, V. Le Thanh, J. Schulze, "Mn5Ge3C0.8 Contacts for Spin Injection into Ge", ECS Trans. 2013 volume 58, issue 9, 29-36

I. A. Fischer, J. Gebauer, E. Rolseth, P. Winkel, L.-T. Chang, K. L. Wang, C. Sürgers and J. Schulze, "Ferromagnetic Mn5Ge3C0.8 contacts on Ge: work function and specific contact resistivity", Semicond. Sci. Technol. 28 (2013) 125002

M. Oehme, D. Buca, K. Kostecki, S. Wirths, B. Holländer, E. Kasper, and J. Schulze, "Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn", J. Crystal Growth, 384, pp. 71-76 (2013)

M. Schmid, M. Kaschel, M. Gollhofer, M. Oehme, J. Werner, K. Ulbricht, E. Kasper, J. Schulze, "Franz-Keldysh effect of Ge-on-Si pin diodes at common chip temperatures", Proc. SPIE 8767, Integrated Photonics: Materials, Devices, and Applications II, 87670C (2013)

Mathias Kaschel, Marc Schmid, Martin Gollhofer, Michael Oehme, Erich Kasper, J. Schulze, "Resistance-capacitance limitation of fast double heterojunction Ge p-i-n photodetectors", Proc. SPIE 8767, Integrated Photonics: Materials, Devices, and Applications II, 87670D (2013)

E. Kasper, M. Kittler, M. Oehme, T. Arguirov, "Germanium tin: silicon photonics toward the mid-infrared", Photonics Research, Vol. 1, no. 2 pp. 69-76, (2013)

E. Kasper, M. Oehme, M. Bauer, M. Kittler, M. Reiche, O. Nakatsuka and S. Zaima, "Group IV Materials", Chapter 1 in "Handbook of Silicon Photonics", Eds. L. Vivien and L. Pavesi, CRC Press(2013)1-54, ISBN 978-1-4398-3610-1

G. Ghione, F. Bonani, L. Quay and E. Kasper, "RF and Microwave Semiconductor Technologies", Chapter 14 in "Guide to State-of-the-Art Electron Devices", Ed. J. N. Burghartz, John Wiley Sons (2013)189-201, ISBN 978-1-118-34726-3

T. Arguirov, O. Vyvenko, M. Oehme, J. Schulze, and M. Kittler, "Dislocation luminescence in highly doped degenerated germanium at room temperature", Phys. Status Solidi C, Vol. 10, No. 1, pp. 56-59 (2013)

E. Kasper, M. Oehme, M. Bauer, M. Kittler, M. Reiche, O. Nakatsuka and S. Zaima, "Group IV Materials", Chapter 1 in Handbook of Silicon Photonics (Eds. L. Vivian and L. Pavesi), CRC Press, ISBN 978-1-4398-3610-1, (2013)

E. Kasper, M. Kittler, M. Oehme and T. Arguirov, "Light from germanium tin heterostructures on silicon", Proc. SPIE 8628, Optoelectronic Integrated Circuits XV, 86280J ; doi:10.1117/12.2006594 (2013)

M. Kaniewska, O. Engström, A. Karmous, M. Oehme, G. Petersson, E. Kasper, "Charge carrier traffic at self-assembled Ge quantum dots on Si", Solid-State Electronics, Vol. 83, pp. 99-106 (2013)

M. Oehme, E. Kasper, J. Schulze, "GeSn Heterojunction Diode: Detector and Emitter in One Device", ECS J. Solid State Sci. Technol., Vol. 2, Issue 4, pp. R76-R78 (2013)

M. Kaschel, M. Schmid, M. Gollhofer, J. Werner, M. Oehme, J. Schulze, "Room-temperature electroluminescence from tensile strained double-heterojunction Germanium pin LEDs on Silicon substrates", Solid-State Electronics, Vol. 83, pp. 87-91 (2013)

L.-T. Chang, W. Han, Y. Zhou, J. Tang, I.A. Fischer, M. Oehme, J. Schulze, R.K. Kawakami, K.L. Wang, "Comparison of spin lifetimes in n-Ge characterized between three-terminal and four-terminal nonlocal Hanle measurements", Semiconductor Science and Technology, Vol. 28, No. 1, p. 015018 (2013)

I.A. Fischer, A.S.M. Bakibillah, M. Golve, D. Hähnel, H. Isemann, A. Kottantharayil, M. Oehme, and J. Schulze, "Silicon Tunneling Field-Effect Transistors With Tunneling in Line With the Gate Field", IEEE Electron Device Letters, Vol. 34, No. 2, pp. 154-156 (2013)

M. Oehme, M. Gollhofer, D. Widmann, M. Schmid, M. Kaschel, E. Kasper, and J. Schulze, "Direct bandgap narrowing in Ge LED's on Si substrates", Optics Express, Vol. 21, No. 2, pp. 2206-2211 (2013)

N. Burle, S. Escoubas, E. Kasper, J. Werner, M. Oehme, and K. Lyutovich, "X-ray imaging and diffraction study of strain relaxation in MBE grown SiGe/Si layers", Phys. Status Solidi C, 10, No. 1, pp. 52-55 (2013)

M. Schmid, M. Kaschel, M. Gollhofer, M. Oehme, J. Werner, E. Kasper, J. Schulze,"Franz-Keldysh effect of germanium-on-silicon p-i-n diodes within a wide temperature range", Thin Solid Films, Vol. 525, No. 15, pp. 110 - 114 (2012)

M. Oehme, E. Kasper, J. Schulze,"GeSn photodetection and electroluminescence devices on Si", ECS Transactions, Vol. 50, No. 9, pp. 583 - 590 (2012)

M. Schmid, M. Oehme, M. Gollhofer, M. Kaschel, E. Kasper, J. Schulze,"Electroluminescence of unstrained and tensile strained Ge-on-Si LEDs", IEEE 9th International Conference on Group IV Photonics (GFP), pp. 135 - 137 (2012)

E. Kasper,"GeSn light-emitting pin diodes on Si", IEEE 9th International Conference on Group IV Photonics (GFP), pp. 311 - 313 (2012)

E. Kasper, N. Burle, S. Escoubas, J. Werner, M. Oehme and K. Lyutovich,"Strain relaxation of metastable SiGe/Si: Investigation with two complementary X-Ray Techniques", J. App. Phys., 111, 063507 (2012)

E. Kasper, M. Oehme, J. Werner, T. Aguirov and M. Kittler,"Direct band gap luminescence from Ge on Si pin diodes", Front. Optoelectron., Vol. 5, pp. 256-260 (2012)

M. Oehme, M. Schmid, M. Kaschel, M. Gollhofer, D. Widmann, E. Kasper, and J. Schulze,"GeSn p-i-n detectors integrated on Si with up to 4% Sn", Appl. Phys. Lett., 101, 141110 (2012)

S. Stefanov, J.C. Conde, A. Benedetti, C. Serra, J. Werner, M. Oehme, J. Schulze, D. Buca, B. Holländer, S. Mantl, and S. Chiussi,"Silicon germanium tin alloys formed by pulsed laser induced epitaxy", Appl. Phys. Lett., 100, 204102 (2012)

M. Wiesner, M. Bommer, W.M. Schulz, M. Etter, J. Werner, M. Oehme, J. Schulze, M. Jetter, P. Michler,"Epitaxially Grown Indium Phosphide Quantum Dots on a Virtual Ge Substrate Realized on Si(001)", Appl. Phys. Express, 5, 042001 (2012)

S. Stefanov, J.C. Conde, A. Benedetti, C. Serra, J. Werner, M. Oehme, J. Schulze, D. Buca, B. Holländer, S. Mantl, and S. Chiussi,"Laser synthesis of germanium tin alloys on virtual germanium", Appl. Phys. Lett., 100, 104101 (2012)

S. Stefanov, J.C. Conde, A. Benedetti, C. Serra, J. Werner, M. Oehme, J. Schulze, S. Chiussi,"Laser assisted formation of binary and ternary Ge/Si/Sn alloys", Thin Solid Films, 520, pp. 3262-3265 (2012)

E. Kasper, J. Werner, M. Oehme, S. Escoubas, N. Burle, J. Schulze,"Growth of Silicon Based Germanium Tin Alloys", Thin Solid Films, 520, pp 3195-3200, (2012)

J. Werner, M. Oehme, A. Schirmer, E. Kasper, J. Schulze,"Molecular beam epitaxy grown GeSn p-i-n photodetectors integrated on Si", Thin Solid Films, 520, pp. 3361-3364 (2012)

J. Schulze, M. Oehme and J. Werner,"MBE grown Ge/Si p-i-n layer sequence for photonic devices", Thin Solid Films, 520, pp. 3259-3261 (2012)

M. Oehme,"Silicon interband tunneling diodes with high peak-to-valley ratios", Thin Solid Films, 520, pp. 3341-3344 (2012)

E. Kasper, M. Oehme, T. Arguirov, J. Werner, M. Kittler, and J. Schulze, "Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes", Advances in OptoElectronics Vol. 2012, Article ID 916275, 4 pages, (2012)

A. Karmous, I. A. Fischer, O. Kirfel, J. Mattes, M. Oehme, J. Werner, and J. Schulze, "Recent developments in Ge dots grown on pit-patterned surfaces", Phys. Status Solidi B 249, No. 4, pp. 764-772 (2012)

I.A. Fischer, J.-L. Wu, R. Vogelgesang, and J. Schulze, "Towards electrical detection of plasmons in all-silicon pin-diodes", Phys. Status Solidi B 249, No. 4, pp. 773-777 (2012)

E. Kasper and H.J. Herzog, "Structural Properties of Silicon-Germanium (SiGe) Nanostructures", in "Silicon-Germanium (SiGe) Nanostructures" (Eds.: Y. Shiraki and N. Usami), Chapter 1, Woodhead Publishing, Cambridge, (2011)

M. Kaniewska, O. Engström, A. Karmous, O. Kirfel, E. Kasper, B. Raeissi, J. Piscator, G. Zaremba, M. Kaczmarczyk, B. Surma, A. Wnuk, M. Wzorek, and A. Czerwinski, "Hole emission mechanism in Ge/Si quantum dots", Phys. Status Solidi C, 8, pp. 411-413 (2011)

M. Kaniewska, O. Engström, A. Karmous, O. Kirfel, E. Kasper, B. Raeissi, J. Piscator, G. Zaremba, M. Kaczmarczyk, M. Wzorek, A. Czerwinski, B. Surma, and A. Wnuk, "Spatial Variation of Hole Eigen Energies in GeSi Quantum Wells", AIP Conf. Proc. 1399, pp. 293-294 (2011)

A. Medvid, P. Onufrijevs, K. Lyutovich, M. Oehme, E. Kasper, "Nano-Cones Formation on a Surface of Ge, Si Crystals and Si1-xGex Solid Solution by Laser Radiation", J. of Nanoscience and Nanotechnology, 11, pp. 9088-9094 (2011)

M. Oehme, J. Werner, M. Gollhofer, M. Schmid, M. Kaschel, E. Kasper, J. Schulze, "Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si", IEEE Phot. Techn. Lett., vol. 23, No. 23, pp. 1751-1753 (2011)

Y. Zhou, W. Han, L.-T. Chang, F. Xiu, M. Wang, M. Oehme, I.A. Fischer, J. Schulze, R.K. Kawakami, K.L. Wang, "Electrical spin injection and transport in germanium", Phys. Rev. B 84, 125323 (2011)

T. Arguirov, M. Kittler, M. Oehme, N.V. Abrosimov, E. Kasper, J. Schulze, "Room temperature direct band-gap emission from an unstrained Ge p-i-n LED on Si", Solid State Phenomena, 178-179, pp. 25-30 (2011)

D. Hähnel, M. Oehme, M. Sarlija, A. Karmous, M. Schmid, J. Werner, O. Kirfel, I. Fischer, J. Schulze, "Germanium vertical Tunneling Field-Effect Transistor", Solid State Electronics, 62, pp.132-137 (2011)

A. Karmous, M. Oehme, J. Werner, O. Kirfel, E. Kasper and J. Schulze, "Local strained silicon platform based on differential SiGe/Si epitaxy", Journal of Crystal Growth, 324, 1, pp. 154-156 (2011)

M. Kaschel , M. Schmid, M. Oehme, J. Werner, J. Schulze, "Germanium photodetectors on Silicon-on-insulator grown with differential molecular beam epitaxy in silicon wells", Solid State Electronics, 60, pp. 105-111 (2011)

M. Kittler, T. Arguirov, M. Oehme, Y. Yamamoto, B. Tillack, N.V. Abrosimov, "Photoluminescence study of Ge containing crystal defects", Phys. Status Solidi A 208, no. 4, pp. 754-759 (2011)

T. S. Perova, J. Wasyluk, K. Lyutovich, E. Kasper, M. Oehme, K. Rode, and A. Waldron, "Composition and strain in thin Si1-xGex virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction", J. Appl. Phys. 109, 033502 (2011)

J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, J. Schulze, "Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy", Appl. Phys. Lett. 98, 061108 (2011)

X. Tang, C. Krzeminski, A.L. des Etanges-Levallois, Z. Chen, E. Dubois, E. Kasper, A. Karmous, N. Reckinger, D. Flandre, L.A. Francis, J.-P. Colinge, and J.-P. Raskin, "Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single electron memories", NANO Lett., 11, pp. 4520-4526 (2011)

H. Xu, A. Karmous and E. Kasper, "Integrated w-band RECTENNA (rectifying antenna) with Ge quantum dot schottky diode", 2011 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, DIGEST OF PAPERS, pp. 69-72, (2011)

E. Kasper, O. Kirfel and A. Karmous, "Positioning Ge-Dots on Si for Device Applications", Horizons in World Physics (Ed. A.Reimer, ISBN 978-1-61761-375-3), Nova Science Publisher, New York, pp. 171-186, (2011)

M. Oehme, M. Sarlija, D. Hähnel, M. Kaschel, J. Werner, E. Kasper and J. Schulze, "Very high room temperature peak to valley current ratio in Si Esaki Tunneling Diodes", IEEE Trans. Electron Devices, vol. 57, no. 11, pp. 2857-2863 (2010)

E. Kasper, M. Oehme, T. Aguirov, J. Werner, M. Kittler, and J. Schulze, "Room temperature direct band gap emission from Ge p-i-n heterojunction photodiodes", post deadline paper on 7th International Conference on Group IV Photonics, LEOS, Beijing, China, (2010)

M. Schmid, M. Oehme, M. Kaschel, J. Werner, E. Kasper, and J. Schulze, "Franz-Keldysh effect in Germanium on Silicon p-i-n photodetectors", 7th International Conference on Group IV Photonics , LEOS, Beijing, China, pp. 329-331 (2010)

O. Moutanabbir, M. Reiche, A. Hähnel, M. Oehme, E. Kasper, "Multiwavelength micro-Raman analysis of strain in nanopatterned ultrathin strained silicon-on-insulator", Appl. Phys. Lett. 97, 053105 (2010) (3 pages)

M. Oehme, A. Karmous, M. Sarlia, J. Werner, E. Kasper, J. Schulze, "Ge quantum dot tunneling diode with room temperature negative differential resistance", Appl. Phys. Lett. 97, 012101 (2010) (3 pages)

E. Kasper, M. Oehme, J. Schulze, S. Klinger, M. Berroth, "High frequency behaviour of Ge pin junctions", International WorkShop on New Group IV Semiconductor Nanoelectronics, Digest of Papers(2010)1-3,Tohoku University, Sendai, JAPAN

E.Kasper, "Prospect and Challenges of On-Chip Optoelectronics", SINEP-09(2009)27, NETBIBLIO,Spain(ISBN:978-84-9745-416-2)

T. Buck and E. Kasper, "RF MEMS phase shifters for 24 and 77 GHz on high resistivity silicon", 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, DIGEST OF PAPERS(2010)224-227

H. Xu and E. Kasper, "A De-embedding Procedure for One-port Active mm-Wave Devices", 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, DIGEST OF PAPERS(2010)37-40

E. Kasper, D. Kissinger, R. Weigel(Eds.), 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, DIGEST OF PAPERS( ISBN: 978-1-4244-5458-7)IEEE(2010)

I. Berbezier, J. P. Ayoub, A. Ronda, M. Oehme, K. Lyutovich, E. Kasper, M. Di Marino, G. Bisognin, E. Napolitani and M. Berti, "Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping", J. Appl. Phys. 107 (3) (2010) 034309 - (5 pages)

A. Medvid, P. Onufrijevs, K. Lyutovich, M. Oehme, E. Kasper, N. Dmitruk, O. Kondratenko, I. Dmitruk, I. Pundyk, "Self-Assembly of Nanohills in Si1-xGex/Si Hetero-Epitaxial Structure Due to Ge Redistribution Induced by Laser Radiation", J. Nanoscience and Nanatechnology, 10 (2) pp. 1094-1098 (2010)

M. Oehme, M. Kaschel, J. Werner, O. Kirfel, M. Schmid, B. Bahouchi, E. Kasper J. Schulze, "Germanium on Silicon Photodetectors with broad spectral range", J. Electrochem. Soc., 157 pp. H144-H148 (2010)

M. Oehme, O. Kirfel, J. Werner, M. Kaschel, E. Kasper, J. Schulze, "Antimony doped Si Esaki diodes without post growth annealing", Thin Solid Films, 518, pp. 65-67 (2010)

J. Werner, M. Oehme, E. Kasper, J. Schulze, "Influence of the modulation doping to the mobility of two-dimensional electron gases in Si/SiGe", Thin Solid Films 518 (2010) S234-S236

A. Karmous, O. Kirfel, M. Oehme, E. Kasper, J. Schulze, "MBE Growth of Ge Quantum Dot Structures in Oxide Windows", IOP Conf. Series: Materials Science and Engineering, 6, 012020 (2009)

S. Klinger, M. Grözing, W. Sfar Zaoui, M. Berroth, M. Kaschel, M. Oehme, E. Kasper, J. Schulze, "Ge on Si p-i-n Photodiodes for a Bit Rate of up to 25 gbit/s", ECOC 2009, 20-24 September, 2009, Vienna, Austria

E. Kasper, D. Kissinger, P. Russer, R. Weigel, "High Speeds in a Single Chip", IEEE Microwave Magazine, Vol. 10, No. 7, pp. S28-S33, Dec. 2009

S.H. Olsen, L. Yan, R. Agaiby, E. Escobedo-Cousin, A.G. O'Neill, P.-E. Hellström, M. Östling, K. Lyutovich, E. Kasper, C. Claeys, E.H.C. Parker, "Strained Si/SiGe MOS technology: Improving gate dielectric integrity", Microelectronic Engineering, 86 (3), pp. 218-223 (2009)

N.M. Santos, J.P. Leitao, N.A. Sobolev, M.R. Correia, M.C. Carmo, M.R. Soares, E. Kasper, J. Werner, "Photoluminescence and Raman study of a tensilely strained Si type-II quantum well on a relaxed SiGe graded buffer", Materials Science and Engineering 6 (2009) pp 012023 (4 pages)

M. Oehme, D. Hähnel, J. Werner, M. Kaschel, O. Kirfel, E. Kasper, J. Schulze, "Si Esaki diodes with high peak to valley current ratios", Appl. Phys. Lett. 95, 242109 (2009) (3 pages)

C. Hofer, C. Teichert, M. Oehme, J. Werner, K. Lyutovich, E. Kasper, "Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures", Appl. Surf. Sci., 256 (2009) pp. 267-273

M. Kaschel, M. Oehme, O. Kirfel, E. Kasper, "Spectral responsivity of fast Ge photodetectors on SOI", Solid State Electronics 53 (2009), pp. 909-911

S. Klinger, M. Berroth, M. Kaschel, M. Oehme, E. Kasper, "Ge on Si p-i-n Photodiodes with a 3-dB bandwidth of 49 GHz", IEEE Phot. Techn. Lett. vol. 21 No. 13 (2009) pp. 920-922

H. Xu, A. Karmous, M. Morschbach, O. Kirfel, S. Spiessberger, E. Kasper, "Integrated Quantum Dot Schottky Diodes for RECTENNA (Rectifying Antenna)", Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on 19-21 Jan. 2009 Page(s):1 - 4

E. Kasper, "Silicon Based Heterostructures: Advances in Channel Materials", Materials Science Forum Vol. 608 (2009) pp 27-53

E. Kasper, H.-J. Müssig, H. G. Grimmeiss, "Future Material Systems: Requirements and Applications", Materials Science Forum Vol. 608 (2009) pp 17-26

H.G. Grimmeiss and E. Kasper, "Today's mainstream microelectronics - a result of technological,market and human enterprise", Materials Science Forum Vol. 608 (2009) pp 1-16

E. Kasper, H.-J. Müssig and H.G. Grimmeiss (eds.), "Advances in Electronic Materials", (Vol.608 of Materials Science Forum ), TransTech Publications, Zürich (2009)

E. Kasper and M. Oehme, "Optoelectronic application of Si/Ge heterostructures ", Phys. Status Solidi C6, 700-703 (2009)

J.P. Leitão , N.M. Santos, N.A. Sobolev, M.R. Correia, M.C. Carmo, E. Kasper, J. Werner, "Optical study of a tensilely strained Si type-II quantum well on a relaxed SiGe graded buffer ", SINEP-09(2009)125-126, NETBIBLIO, Spain(ISBN:978-84-9745-416-2)

E.Kasper, "Prospects and challenges of silicon/germanium on-chip optoelectronics", Frontiers of Optoelectronics in China 3, 143-152 (2009)

Contact

Jörg Schulze
Prof. Dr. habil.

Jörg Schulze

Head of Institute

Cinja Schwiedel
 

Cinja Schwiedel

Assistant to the institute´s management

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