- 5/21/19, 4:30 p.m. – 6:00 p.m.
Am Dienstag den 21. Mai setzt sich das IHT-Kolloquium fort, es spricht:
Dr. Sébastien Chartier, Institut für Robuste Leistungshalbleitersysteme, Universität Stuttgart
zum Thema: „Silicon-Based MMICs for Next Generation Active Phased-Array Antennas and FMCW Radar".
Silicon-Based MMICs for Next Generation Active Phased-Array Antennas and FMCW Radar
As BiCMOS and CMOS technologies continue to improve in scaling and performance, new applications are continually enabled. In this presentation, two major trends will be highlighted.
The large scale deployment of active phased-array antennas is today still a challenge. Bulky and expensive multi-chip, multi-technology, and multi-package systems provide outstanding performance but remain only suitable for niche market applications such as e.g. space. The combination of high-performance SiGe heterojunction bipolar transistor (HBT), dense CMOS digital technology and well-characterized/modeled RF passive components provides the capability to create large multielement, electronically tunable phased array antennas with potentially on-chip processing. These SoCs or modules will have superior performance such as lower size, weight and cost as compared to current systems. Furthermore, using logic, processing and memory, they will have the advantage of reconfigurability, update and upgrade capability without expensive redesigns of the chip or of the entire system.
A second trend is the use of advanced SiGe BiCMOS as well as advanced CMOS technologies for next generation automotive radar sensors. In order to improve road safety, passive systems such as seat belt, airbags, anti-lock braking are no longer sufficient. The next step towards improved security in cars is the use of active sensors to avoid collisions (e.g. lane assist, adaptive cruise control). This second part of the presentation will depict current status of frequency modulated continuous wave (FMCW) automotive radar sensors and the challenges towards future fully autonomous (level 5) cars.
Sébastien Chartier received the Master’s degree in microelectronic from the University of Lille, Lille, France, in 2003 and the Dr.-Ing. degree from the University of Ulm, Ulm, Germany, in 2009. In 2004, he joined the Institute of Electron Devices and Circuits, University of Ulm, as a member of the scientific staff, working on the design, assembly and testing of millimeter-wave SiGe BiCMOS MMICs, especially for application in automotive radar systems. In 2007, he joined the Fraunhofer Institute for applied solid-state physics (IAF) in Freiburg, Germany, working on microwave and mm-wave MMIC design based on advanced metamorphic HEMT technologies for radar, communication and medical applications. From 2009 to 2017, he worked at Airbus Defence and Space GmbH (now Hensoldt GmbH) as an R&D engineer working on SiGe BiCMOS based circuit design for next generation T/R modules for phased-array radar and communication systems. He was appointed specialist for RF system-on-chip in 2011 and Expert for system-on-chip in 2013. In 2017, he joined NXP Semiconductors Germany GmbH, Hamburg, Germany, as a sub-system design leader working on Si-based radar chips for next generation advanced driver-assistance systems (ADAS). In 2019, he joined the Institute of Robust Power Semiconductor Systems (ILH), University of Stuttgart, Stuttgart, Germany as group leader for microwave and terahertz electronics. He has authored and co-authored more than 30 peer-reviewed papers and holds one patent (one additional patent is currently pending).