Dieses Bild zeigt Jörg Schulze

Jörg Schulze

Herr Prof. Dr. habil.

Direktor
Institut für Halbleitertechnik

Kontakt

+49 711 685 68003
+49 711 685 68044

Visitenkarte (VCF)

Pfaffenwaldring 47
70569 Stuttgart
Deutschland
Raum: 1.424

  1. 2021

    1. Funk, H. S.; Weißhaupt, D.; Schwarz, D.; u. a. (2021): Characterization of Fe Micromagnets for Semiconductor Spintronics by In-Field Magnetic Force Microscopy, in: 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), (2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)), S. 31–35, doi: 10.23919/MIPRO52101.2021.9596763.
    2. Weißhaupt, David; Funk, Hannes S.; Sürgers, Christoph; u. a. (2021): Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics, in: 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), (2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)), S. 45–49, doi: 10.23919/MIPRO52101.2021.9596924.
    3. Marchionni, A.; Zucchetti, C.; Ciccacci, F.; u. a. (2021): Inverse spin-Hall effect in GeSn, in: Applied Physics Letters, (Applied Physics Letters), Jg. 118, Nr. 21, S. 212402, doi: 10.1063/5.0046129.
    4. Berkmann, F.; Ayasse, M.; Schlipf, J.; u. a. (2021): Plasmonic gratings from highly doped Ge1−ySny films on Si, in: Journal of Physics D: Applied Physics, (Journal of Physics D: Applied Physics), Jg. 54, Nr. 445109, doi: 10.1088/1361-6463/ac1f51.
    5. Schlipf, Jon; Tetzner, Henriette; Spirito, Davide; u. a. (2021): Raman shifts in MBE-grown SixGe1 − x − ySny alloys with large Si content, in: Journal of Raman Spectroscopy, (Journal of Raman Spectroscopy), Jg. 52, Nr. 6, S. 1167–1175, doi: https://doi.org/10.1002/jrs.6098.
    6. Schwarz, D.; Schäfer, S. C.; Seidel, L.; u. a. (2021): MBE-Grown Ge0.92Sn0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge0.92Sn0.08 Substrate, in: 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), (2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)), S. 50–54, doi: 10.23919/MIPRO52101.2021.9596634.
    7. Choudhary, Sumit; Schwarz, Daniel; Funk, Hannes S.; u. a. (2021): Impact of Charge Trapping On Epitaxial p-Ge-on-p-Si and HfO2 Based Al/HfO2/p-Ge-on-p-Si/Al Structures Using Kelvin Probe Force Microscopy and Constant Voltage Stress, in: IEEE Transactions on Nanotechnology, (IEEE Transactions on Nanotechnology), Jg. 20, S. 346–355, doi: 10.1109/TNANO.2021.3069820.
    8. Berkmann, F.; Ayasse, M.; Mörz, F.; u. a. (2021): Titanium and Nickel as alternative materials for mid Infrared Plasmonic, in: 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), (2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)), S. 36–39, doi: 10.23919/MIPRO52101.2021.9597155.
    9. Spièce, Jean; Evangeli, Charalambos; Robson, Alexander J.; u. a. (2021): Quantifying thermal transport in buried semiconductor nanostructures via cross-sectional scanning thermal microscopy, in: Nanoscale, The Royal Society of Chemistry (Nanoscale), Jg. 13, Nr. 24, S. 10829–10836, doi: 10.1039/D0NR08768H.
    10. Sigle, E.; Weißhaupt, D.; Oehme, M.; u. a. (2021): Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy, in: 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), (2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)), S. 40–44, doi: 10.23919/MIPRO52101.2021.9597145.
    11. Seidel, L.; Schwarz, D.; Oehme, M.; u. a. (2021): Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures, in: 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), (2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)), S. 55–59, doi: 10.23919/MIPRO52101.2021.9597082.
    12. Oehme, Michael; Kaschel, Mathias; Epple, Steffen; u. a. (2021): Backside Illuminated “Ge-on-Si” NIR Camera, in: IEEE Sensors Journal, (IEEE Sensors Journal), Jg. 21, Nr. 17, S. 18696–18705, doi: 10.1109/JSEN.2021.3091203.
    13. Khosla, Robin; Schwarz, Daniel; Funk, Hannes S.; u. a. (2021): High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications, in: Solid-State Electronics, (Solid-State Electronics), Jg. 185, S. 108027, doi: https://doi.org/10.1016/j.sse.2021.108027.
  2. 2020

    1. "Weißhaupt, David"; "Funk, Hannes Simon"; "Kern, Michal"; u. a. (2020): Weak localization and weak antilocalization in doped Ge1-y Sn y  layers with up to 8% Sn, in: Journal of Physics: Condensed Matter, (Journal of Physics: Condensed Matter), Jg. 33, Nr. 8, S. 085703, doi: 10.1088/1361-648x/abcb68.
    2. Dettling, M. M.; Weiβhaupt, D.; Funk, H. S.; u. a. (2020): Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers, in: 2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO), (2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO)), S. 17–21, doi: 10.23919/MIPRO48935.2020.9245273.
    3. Schlykow, Viktoria; Manganelli, Costanza Lucia; Römer, Friedhard; u. a. (2020): Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas, in: Nanotechnology, IOP Publishing (Nanotechnology), Jg. 31, Nr. 34, S. 345203, doi: 10.1088/1361-6528/ab91ef.
  3. 2019

    1. Das, B.; Lele, A.; Kumbhare, P.; u. a. (2019): PrxCa1–xMnO3-Based Memory and Si Time-Keeping Selector for Area and Energy Efficient Synapse, in: IEEE Electron Device Letters, (IEEE Electron Device Letters), Jg. 40, Nr. 6, S. 850–853, doi: 10.1109/LED.2019.2914406.
    2. Weiser, Mathias C. J.; Schwarz, D.; Funk, H. S.; u. a. (2019): Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy, in: 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 1–6, doi: 10.23919/MIPRO.2019.8756640.
    3. Oehme, M.; Schulze, J. (2019): GeSn/Ge Pin Diodes on Si with Sn Contents up to 14 %, in: The Electrochemical Society Transactions, (The Electrochemical Society Transactions), Jg. 93, Nr. 1, S. 45–48, doi: 10.1149/09301.0045ecst.
    4. Köllner, Ann-Christin; Yu, Zili; Oehme, Michael; u. a. (2019): A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector, in: 2019 IEEE SENSORS, (2019 IEEE SENSORS), S. 1–4, doi: 10.1109/SENSORS43011.2019.8956731.
    5. Funk, Hannes S.; Kern, Michal; Weisshaupt, David; u. a. (2019): Magnetic Characterization of a Mn Based Ferromagnet on SixGe(1-x-y)Sny with High Sn Content, in: The Electrochemical Society Transactions, (The Electrochemical Society Transactions), Jg. 93, Nr. 1, S. 101–104, doi: 10.1149/09301.0101ecst.
    6. Gebert, L.; Schwarz, D.; Elsayed, A.; u. a. (2019): Electrical Characterization of pure Boron-on-Germanium pin Diodes, in: 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 13–18, doi: 10.23919/MIPRO.2019.8757123.
    7. Povolni, P.; Schwarz, D.; Clausen, C. J.; u. a. (2019): Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well, in: 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 1–6, doi: 10.23919/MIPRO.2019.8757211.
    8. Dick, Jan F.; Elsayed, A.; Schwarz, D.; u. a. (2019): Electrical Characterization of Low-Temperature Boron on Silicon Deposition utilizing Molecular Beam Epitaxy, in: 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 19–23, doi: 10.23919/MIPRO.2019.8756927.
  4. 2018

    1. Bechler, Stefan; Kern, Michal; Funk, Hannes Simon; u. a. (2018): Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111), in: Semiconductor Science and Technology, (Semiconductor Science and Technology), Jg. 33, Nr. 9, S. 095008, doi: https://doi.org/10.1088/1361-6641/aad4cf.
    2. Zhang, W.; Kasper, E.; Schulze, J. (2018): An 82-GHz 14.6-mW Output Power Silicon Impact Ionization Avalanche Transit Time Transmitter With Monolithically Integrated Coplanar Waveguide Patch Antenna, in: IEEE Transactions on Microwave Theory and Techniques, (IEEE Transactions on Microwave Theory and Techniques), S. 1–10, doi: 10.1109/TMTT.2018.2876220.
    3. Das, B.; Schulze, J.; Ganguly, U. (2018): Ultra-Low Energy LIF Neuron Using Si NIPIN Diode for Spiking Neural Networks, in: IEEE Electron Device Letters, (IEEE Electron Device Letters), Jg. 39, Nr. 12, S. 1832–1835, doi: 10.1109/LED.2018.2876684.
    4. Oehme, Michael; Schwarz, D.; Schulze, Jörg; u. a. (2018): SiGeSn material for integrated optical devices, in: Silicon Photonics: From Fundamental Research to Manufacturing, SPIE (Silicon Photonics: From Fundamental Research to Manufacturing), doi: 10.1117/12.2318011.
    5. Das, B.; Schulze, J.; Ganguly, U. (2018): Transient Phenomena in Sub-Bandgap Impact Ionization in Si n-i-p-i-n Diode, in: IEEE Transactions on Electron Devices, (IEEE Transactions on Electron Devices), Jg. 65, Nr. 8, S. 3414–3420, doi: 10.1109/TED.2018.2846360.
    6. Jahandar, Pedram; Weisshaupt, David; Colston, Gerard; u. a. (2018): The effect of Ge precursor on the heteroepitaxy of Ge 1− x Sn x epilayers on a Si (001) substrate, in: Semiconductor Science and Technology, (Semiconductor Science and Technology), Jg. 33, Nr. 3, S. 034003.
    7. Hänel, L. A.; Elogail, Y.; Schwarz, D.; u. a. (2018): Performance of C6H8O7-treated and H- and Cl-passivated Ge-MOS-capacitances on Ge-virtual-substrate on Si(001), in: 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 0027–0031, doi: 10.23919/MIPRO.2018.8400005.
    8. Prucnal, S; Berencén, Y; Wang, M; u. a. (2018): Ex situ n + doping of GeSn alloys via non-equilibrium processing, in: Semiconductor Science and Technology, (Semiconductor Science and Technology), Jg. 33, Nr. 6, S. 065008, doi: 10.1088/1361-6641/aabe05.
    9. Clausen, Caterina J; Fischer, Inga A; Weisshaupt, David; u. a. (2018): Electrical characterization of n-doped SiGeSn diodes with high Sn content, in: Semiconductor Science and Technology, (Semiconductor Science and Technology), Jg. 33, Nr. 12, S. 124017, doi: https://doi.org/10.1088/1361-6641/aae3ab.
    10. Clausen, C. J.; Fischer, I. A.; Hoppe, N.; u. a. (2018): Tunnel Injection into Group IV Semiconductors and its Application to Light-Emitting Devices, in: 2018 IEEE Photonics Society Summer Topical Meeting Series (SUM), (2018 IEEE Photonics Society Summer Topical Meeting Series (SUM)), S. 29–30, doi: 10.1109/PHOSST.2018.8456688.
    11. Koerner, R.; Fischer, I. A.; Schwarz, D.; u. a. (2018): Engineering of Germanium Tunnel Junctions for Optical Applications, in: IEEE Photonics Journal, (IEEE Photonics Journal), Jg. 10, Nr. 2, S. 1–12, doi: 10.1109/JPHOT.2018.2818662.
    12. Berkmann, F.; Augel, L.; Schilling, M. B.; u. a. (2018): Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates, in: 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 0032–0035, doi: 10.23919/MIPRO.2018.8400006.
    13. Augel, Lion; Kawaguchi, Yuma; Bechler, Stefan; u. a. (2018): Integrated Collinear Refractive Index Sensor with Ge PIN Photodiodes, in: ACS Photonics, American Chemical Society (ACS) (ACS Photonics), doi: 10.1021/acsphotonics.8b01067.
    14. Elogail, Yasmine; Fischer, Inga A; Wendav, Torsten; u. a. (2018): Enhancement of Ge-based p-channel vertical FET performance by channel engineering using planar doping and a Ge/Si x Ge 1– x – y Sn y heterostructure model for low power FET applications, in: Semiconductor Science and Technology, (Semiconductor Science and Technology), Jg. 33, Nr. 11, S. 114001, doi: 10.1088/1361-6641/aae001.
    15. Schlipf, J.; Itabashi, Y.; Goto, T.; u. a. (2018): FDTD simulation of enhanced Faraday effect in plasmonic composite structures with rectangularly arranged Au particles., in: 2018 IEEE International Magnetic Conference (INTERMAG), (2018 IEEE International Magnetic Conference (INTERMAG)), S. 1–2, doi: 10.1109/INTMAG.2018.8508694.
    16. Kawaguchi, Y.; Augel, L.; Uchida, H.; u. a. (2018): Simulation-based optimization of Ge-PIN-photodiodes with Al nanohole arrays for refractive index sensing, in: 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 0023–0026, doi: 10.23919/MIPRO.2018.8400004.
    17. Vasin, A. S.; Oliveira, F; Cerqueira, M. F.; u. a. (2018): Structural and vibrational properties of SnxGe1-x: Modeling and experiments, in: Journal of Applied Physics, American Institute of Physics (Journal of Applied Physics), Jg. 124, Nr. 3, S. 035105--, doi: 10.1063/1.5030104.
  5. 2017

    1. Funk, H. S.; Ng, J.; Kamimura, N.; u. a. (2017): Local growth of graphene on Cu and Cu0.88Ni0.12 foil substrates, in: 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 31–36, doi: 10.23919/MIPRO.2017.7973386.
    2. Rolseth, E. G.; Blech, A.; Fischer, I. A.; u. a. (2017): Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges, in: 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 57–65, doi: 10.23919/MIPRO.2017.7973391.
    3. Weisshaupt, D.; Jahandar, P.; Colston, G.; u. a. (2017): Impact of Sn segregation on Ge1−xSnx epi-layers growth by RP-CVD, in: 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 43–47, doi: 10.23919/MIPRO.2017.7973388.
    4. Fischer, I. A.; Augel, L.; Berrier, A.; u. a. (2017): (Si)GeSn plasmonics, in: 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM), (2017 IEEE Photonics Society Summer Topical Meeting Series (SUM)), S. 15–16, doi: 10.1109/PHOSST.2017.8012628.
    5. Khosla, R.; Rolseth, E. G.; Kumar, P.; u. a. (2017): Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories, in: IEEE Transactions on Device and Materials Reliability, (IEEE Transactions on Device and Materials Reliability), Jg. 17, Nr. 1, S. 80–89, doi: 10.1109/TDMR.2017.2659760.
    6. Schlipf, J.; Frieiro, J. L.; Fischer, I. A.; u. a. (2017): Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy, in: 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 37–42, doi: 10.23919/MIPRO.2017.7973387.
    7. Fischer, Inga A; Berrier, Audrey; Hornung, Florian; u. a. (2017): Optical critical points of SixGe1-x-ySny alloys with high Si content, in: Semiconductor Science and Technology, (Semiconductor Science and Technology), Jg. 32, Nr. 12, S. 124004, doi: https://doi.org/10.1088/1361-6641/aa95d3.
    8. Perova, T. S.; Kasper, E.; Oehme, M.; u. a. (2017): Features of polarized Raman spectra for homogeneous and non-homogeneous compressively strained Ge1−ySny alloys, in: Journal of Raman Spectroscopy, (Journal of Raman Spectroscopy), Jg. 48, Nr. 7, S. 993–1001, doi: 10.1002/jrs.5160.
    9. Koerner, R; Fischer, I A; Schwarz, D; u. a. (2017): MBE grown germanium tunnel-junctions—burstein-moss effect and band-edge luminescence in the Ge Zener-Emitter, in: Semiconductor Science and Technology, (Semiconductor Science and Technology), Jg. 32, Nr. 12, S. 124005, doi: 10.1088/1361-6641/aa916f.
    10. Schwartz, Bernhard; Oehme, Michael; Koerner, Roman; u. a. (2017): Luminescence of strained Ge on GeSn virtual substrate grown on Si (001), in: Graham T. Reed und Andrew P. Knights (Hrsg.), Silicon Photonics XII, SPIE (Silicon Photonics XII), doi: 10.1117/12.2249564.
    11. Kormoš, L.; Kratzer, M.; Kostecki, K.; u. a. (2017): Surface analysis of epitaxially grown GeSn alloys with Sn contents between 15% and 18%, in: Surface and Interface Analysis, (Surface and Interface Analysis), Jg. 49, S. 297–302.
    12. Koerner, R.; Fischer, I. A.; Oehme, M.; u. a. (2017): Zener tunnel-injection for Ge optical amplifiers, lasers and modulators (invited), in: 2017 IEEE 14th International Conference on Group IV Photonics (GFP), (2017 IEEE 14th International Conference on Group IV Photonics (GFP)), S. 11–12, doi: 10.1109/GROUP4.2017.8082171.
    13. Augel, L.; Körner, R.; Bechler, S.; u. a. (2017): Ge PIN photodetectors with nanohole arrays for refractive index sensing, in: 2017 IEEE 14th International Conference on Group IV Photonics (GFP), (2017 IEEE 14th International Conference on Group IV Photonics (GFP)), S. 161–162, doi: 10.1109/GROUP4.2017.8082246.
    14. Augel, L.; Berkmann, F.; Latta, D.; u. a. (2017): Optofluidic sensor system with Ge PIN photodetector for CMOS-compatible sensing, in: Microfluidics and Nanofluidics, (Microfluidics and Nanofluidics), Jg. 21, Nr. 11, S. 169, doi: 10.1007/s10404-017-2007-3.
    15. Koerner, R.; Fischer, I. A.; Soref, R.; u. a. (2017): Tunnel-modulated Ge LED/laser light source and a sub-thermal voltage switching detector for the monolithic on-chip optical transceiver, in: 2017 IEEE International Electron Devices Meeting (IEDM), (2017 IEEE International Electron Devices Meeting (IEDM)), S. 24.4.1-24.4.4, doi: 10.1109/IEDM.2017.8268453.
  6. 2016

    1. Fischer, I. A.; Oliveira, F.; Benedetti, A.; u. a. (2016): (Si)GeSn nanostructures for optoelectronic device applications, in: 2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 1–4, doi: 10.1109/MIPRO.2016.7522099.
    2. Das, B.; Sushama, S.; Schulze, J.; u. a. (2016): Sub-0.2 V Impact Ionization in Si n-i-p-i-n Diode, in: IEEE Transactions on Electron Devices, (IEEE Transactions on Electron Devices), Jg. 63, Nr. 12, S. 4668–4673, doi: 10.1109/TED.2016.2620986.
    3. Fischer, Inga A.; Augel, Lion; Kropp, Timo; u. a. (2016): Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of nanoantenna size on light scattering into waveguide modes, in: Applied Physics Letters, (Applied Physics Letters), Jg. 108, Nr. 7, doi: http://dx.doi.org/10.1063/1.4942393.
    4. Srinivasan, V S Senthil; Fischer, Inga A; Augel, Lion; u. a. (2016): Contact resistivities of antimony-doped n-type Ge 1− x Sn x, in: Semiconductor Science and Technology, (Semiconductor Science and Technology), Jg. 31, Nr. 8, S. 08LT01.
    5. Wendav, Torsten; Fischer, Inga A.; Montanari, Michele; u. a. (2016): Compositional dependence of the band-gap of Ge1−x−ySixSny alloys, in: Appl. Phys. Lett., American Institute of Physics (Appl. Phys. Lett.), Jg. 108, Nr. 24, S. 242104--, doi: 10.1063/1.4953784.
    6. Augel, L.; Fischer, I. A.; Hornung, F.; u. a. (2016): Ellipsometric characterization of doped Ge0.95Sn0.05 films in the infrared range for plasmonic applications, in: Opt. Lett., OSA (Opt. Lett.), Jg. 41, Nr. 18, S. 4398--4400, doi: 10.1364/OL.41.004398.
    7. Oehme, Michael; Gollhofer, Martin; Kostecki, Konrad; u. a. (2016): Ge and GeSn Light Emitters on Si, in: Gettering and Defect Engineering in Semiconductor Technology XVI, Trans Tech Publications (Gettering and Defect Engineering in Semiconductor Technology XVI), S. 353--360, doi: 10.4028/www.scientific.net/SSP.242.353.
    8. Schwartz, Bernhard; Saring, Philipp; Arguirov, Tzanimir; u. a. (2016): Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers, in: Gettering and Defect Engineering in Semiconductor Technology XVI, Trans Tech Publications (Gettering and Defect Engineering in Semiconductor Technology XVI), S. 361--367, doi: 10.4028/www.scientific.net/SSP.242.361.
    9. Koerner, R.; Schwaiz, D.; Fischer, I. A.; u. a. (2016): The Zener-Emitter: A novel superluminescent Ge optical waveguide-amplifier with 4.7 dB gain at 92 mA based on free-carrier modulation by direct Zener tunneling monolithically integrated on Si, in: 2016 IEEE International Electron Devices Meeting (IEDM), (2016 IEEE International Electron Devices Meeting (IEDM)), S. 22.5.1-22.5.4, doi: 10.1109/IEDM.2016.7838474.
    10. Zhang, Wogong; Yamamoto, Yuji; Oehme, Michael; u. a. (2016): S-parameter characterization and lumped-element modelling of    millimeter-wave single-drift impact-ionization avalanche transit-time    diode, in: JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD (JAPANESE JOURNAL OF APPLIED PHYSICS), Jg. 55, Nr. 4, SI, doi: 10.7567/JJAP.55.04EF03.
    11. Koerner, R.; Oehme, M.; Kostecki, K.; u. a. (2016): The Zener-Emitter: Electron injection by direct-tunneling in Ge LEDs for the on-chip Si light source, in: 2016 74th Annual Device Research Conference (DRC), (2016 74th Annual Device Research Conference (DRC)), S. 1–2, doi: 10.1109/DRC.2016.7548478.
    12. Zhang, W.; Oehme, M.; Matthies, K.; u. a. (2016): Small-signal IMPATT diode characterization for mm-wave power generation in monolithic scenarios, in: 2016 46th European Solid-State Device Research Conference (ESSDERC), (2016 46th European Solid-State Device Research Conference (ESSDERC)), S. 109–112, doi: 10.1109/ESSDERC.2016.7599600.
    13. Chang, Li-Te; Fischer, Inga Anita; Tang, Jianshi; u. a. (2016): Electrical detection of spin transport in Si two-dimensional electron gas systems, in: Nanotechnology, (Nanotechnology), Jg. 27, Nr. 36, S. 365701.
    14. Wendav, T.; Fischer, Inga Anita; Virgilio, M.; u. a. (2016): Photoluminescence from ultrathin Ge-rich multiple quantum wells observed    up to room temperature: Experiments and modeling, in: PHYSICAL REVIEW B, AMER PHYSICAL SOC (PHYSICAL REVIEW B), Jg. 94, Nr. 24, doi: 10.1103/PhysRevB.94.245304.
    15. Augel, L.; Fischer, I. A.; Dunbar, L. A.; u. a. (2016): Plasmonic nanohole arrays on Si-Ge heterostructures: an approach for integrated biosensors, in: Tuan Vo-Dinh und Joseph R. Lakowicz (Hrsg.), Plasmonics in Biology and Medicine XIII, SPIE (Plasmonics in Biology and Medicine XIII), doi: 10.1117/12.2212650.
  7. 2015

    1. Mandapati, R.; Shrivastava, S.; Sushama, S.; u. a. (2015): Improved Off-Current and Modeling in Sub-430 °C Si p-i-n Selector for Unipolar Resistive Random Access Memory, in: IEEE Electron Device Letters, (IEEE Electron Device Letters), Jg. 36, Nr. 12, S. 1310–1313, doi: 10.1109/LED.2015.2491221.
    2. Fischer, Inga A.; Augel, Lion; Jitpakdeebodin, Songchai; u. a. (2015): Plasmonics-integrated Ge PIN-photodetectors: efficiency enhancement by Al nanoantennas and plasmon detection, in: Kallol Bhattacharya (Hrsg.), International Conference on Optics and Photonics 2015, SPIE (International Conference on Optics and Photonics 2015), doi: 10.1117/12.2192161.
    3. Schwartz, B.; Arguirov, T.; Kittler, M.; u. a. (2015): Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers, in: Graham T. Reed und Michael R. Watts (Hrsg.), Silicon Photonics X, SPIE (Silicon Photonics X), doi: 10.1117/12.2080816.
    4. Koerner, Roman; Oehme, Michael; Gollhofer, Martin; u. a. (2015): Electrically pumped lasing from Ge Fabry-Perot resonators on Si, in: Opt. Express, OSA (Opt. Express), Jg. 23, Nr. 11, S. 14815--14822, doi: 10.1364/OE.23.014815.
    5. Oliveira, F; Fischer, I. A.; Benedetti, A; u. a. (2015): Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy, in: Appl. Phys. Lett., American Institute of Physics (Appl. Phys. Lett.), Jg. 107, Nr. 26, S. 262102--, doi: 10.1063/1.4938746.
    6. Schulze, Jörg; Blech, Andreas; Datta, Arnab; u. a. (2015): Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors, in: Solid-State Electronics, Elsevier BV (Solid-State Electronics), Jg. 110, S. 59--64, doi: 10.1016/j.sse.2015.01.013.
    7. Fischer, Inga A.; Wendav, Torsten; Augel, Lion; u. a. (2015): Growth and characterization of SiGeSn quantum well photodiodes, in: Opt. Express, OSA (Opt. Express), Jg. 23, Nr. 19, S. 25048--25057, doi: 10.1364/OE.23.025048.
    8. Oliveira, F; Fischer, I. A.; Benedetti, A; u. a. (2015): Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis, in: Journal of Applied Physics, American Institute of Physics (Journal of Applied Physics), Jg. 117, Nr. 12, S. 125706--, doi: 10.1063/1.4915939.
    9. Steglich, M; Oehme, M; Käsebier, T; u. a. (2015): Ge-on-Si photodiode with black silicon boosted responsivity, in: Appl. Phys. Lett., American Institute of Physics (Appl. Phys. Lett.), Jg. 107, Nr. 5, S. 051103--, doi: 10.1063/1.4927836.
    10. Haehnel, D.; Fischer, I. A.; Hornung, A.; u. a. (2015): Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content, in: IEEE Transactions on Electron Devices, (IEEE Transactions on Electron Devices), Jg. 62, Nr. 1, S. 36–43, doi: 10.1109/TED.2014.2371065.
    11. Schwartz, Bernhard; Oehme, Michael; Kostecki, Konrad; u. a. (2015): Electroluminescence of GeSn/Ge MQW LEDs on Si substrate, in: Opt. Lett., OSA (Opt. Lett.), Jg. 40, Nr. 13, S. 3209--3212, doi: 10.1364/OL.40.003209.
    12. Zhang, W.; Oehme, M.; Kostecki, K.; u. a. (2015): Systematic characterization of Silicon IMPATT diode for Monolithic E-band amplifier design, in: 2015 German Microwave Conference, (2015 German Microwave Conference), S. 135–138, doi: 10.1109/GEMIC.2015.7107771.
  8. 2014

    1. Oehme, M; Kostecki, K; Schmid, M; u. a. (2014): Franz-Keldysh effect in GeSn pin photodetectors, in: Appl. Phys. Lett., American Institute of Physics (Appl. Phys. Lett.), Jg. 104, Nr. 16, S. 161115--, doi: 10.1063/1.4873935.
    2. Oehme, Michael; Kostecki, Konrad; Ye, Kaiheng; u. a. (2014): GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz, in: Opt. Express, OSA (Opt. Express), Jg. 22, Nr. 1, S. 839--846, doi: 10.1364/OE.22.000839.
    3. Oehme, Michael; Kostecki, Konrad; Schmid, Marc; u. a. (2014): Epitaxial growth of strained and unstrained GeSn alloys up to 25\% Sn, in: Thin Solid Films, Elsevier BV (Thin Solid Films), Jg. 557, S. 169--172, doi: 10.1016/j.tsf.2013.10.064.
    4. Stefanov, Stefan; Serra, Carmen; Benedetti, Alessandro; u. a. (2014): Structure and composition of Silicon–Germanium–Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced Epitaxy, in: Microelectronic Engineering, Elsevier BV (Microelectronic Engineering), Jg. 125, S. 18--21, doi: 10.1016/j.mee.2014.03.017.
    5. Oehme, M.; Kostecki, K.; Arguirov, T.; u. a. (2014): GeSn Heterojunction LEDs on Si Substrates, in: IEEE Photonics Technology Letters, (IEEE Photonics Technology Letters), Jg. 26, Nr. 2, S. 187–189, doi: 10.1109/LPT.2013.2291571.
    6. Schmid, Marc; Oehme, Michael; Gollhofer, Martin; u. a. (2014): Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes, in: Thin Solid Films, Elsevier BV (Thin Solid Films), Jg. 557, S. 351--354, doi: 10.1016/j.tsf.2013.08.041.
    7. Fischer, Inga Anita; Chang, Li-Te; Sürgers, Christoph; u. a. (2014): Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si, in: Applied Physics Letters, (Applied Physics Letters), Jg. 105, Nr. 22, S. 222408, doi: 10.1063/1.4903233.
    8. Zhang, W.; Ye, K.; Bechler, S.; u. a. (2014): A reliable 40 GHz opto-electrical system for characterization of frequency response of Ge PIN photo detectors, in: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), (2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)), S. 117–118, doi: 10.1109/ISTDM.2014.6874649.
    9. Oehme, M.; Widmann, D.; Kostecki, K.; u. a. (2014): GeSn/Ge multiquantum well photodetectors on Si substrates, in: Opt. Lett., OSA (Opt. Lett.), Jg. 39, Nr. 16, S. 4711--4714, doi: 10.1364/OL.39.004711.
    10. Chiussi, S.; Stefanov, S.; Benedetti, A.; u. a. (2014): (Invited) UV Excimer Laser Assisted Heteroepitaxy of (Si)GeSn on Si(100), in: ECS Transactions, The Electrochemical Society (ECS Transactions), Jg. 64, Nr. 6, S. 115--125, doi: 10.1149/06406.0115ecst.
    11. Kostecki, K.; Oehme, M.; Koerner, R.; u. a. (2014): Virtual Substrate Technology for Ge1-XSnX Heteroepitaxy on Si Substrates, in: ECS Transactions, The Electrochemical Society (ECS Transactions), Jg. 64, Nr. 6, S. 811--818, doi: 10.1149/06406.0811ecst.
    12. Ye, K.; Zhang, W.; Oehme, M.; u. a. (2014): Extraction of GeSn absorption coefficients from photodetector response, in: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), (2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)), S. 137–138, doi: 10.1109/ISTDM.2014.6874643.
  9. 2013

    1. Arguirov, Tzanimir; Vyvenko, Oleg; Oehme, Michael; u. a. (2013): Dislocation luminescence in highly doped degenerated germanium at room temperature, in: physica status solidi c, (physica status solidi c), Jg. 10, Nr. 1, S. 56–59, doi: 10.1002/pssc.201200395.
    2. Schmid, M.; Kaschel, M.; Gollhofer, M.; u. a. (2013): Franz-Keldysh effect of Ge-on-Si pin diodes at common chip temperatures, in: Jean-Marc Fédéli, Laurent Vivien, und Meint K. Smit (Hrsg.), Integrated Photonics: Materials, Devices, and Applications II, SPIE (Integrated Photonics: Materials, Devices, and Applications II), doi: 10.1117/12.2017168.
    3. Oehme, M.; Kasper, E.; Schulze, J. (2013): GeSn Heterojunction Diode: Detector and Emitter in One Device, in: ECS Journal of Solid State Science and Technology, The Electrochemical Society (ECS Journal of Solid State Science and Technology), Jg. 2, Nr. 4, S. R76--R78, doi: 10.1149/2.002305jss.
    4. Oehme, Michael; Gollhofer, Martin; Widmann, Daniel; u. a. (2013): Direct bandgap narrowing in Ge LED’s on Si substrates, in: Opt. Express, OSA (Opt. Express), Jg. 21, Nr. 2, S. 2206--2211, doi: 10.1364/OE.21.002206.
    5. Oehme, M.; Buca, D.; Kostecki, K.; u. a. (2013): Epitaxial growth of highly compressively strained GeSn alloys up to 12.5\% Sn, in: Journal of Crystal Growth, Elsevier BV (Journal of Crystal Growth), Jg. 384, S. 71--76, doi: 10.1016/j.jcrysgro.2013.09.018.

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