Dieses Bild zeigt Jörg Schulze

Jörg Schulze

Herr Prof. Dr. habil.

Direktor
Institut für Halbleitertechnik

Kontakt

+49 711 685 68003
 +4971168568044
Visitenkarte (VCF)

Pfaffenwaldring 47
70569 Stuttgart
Deutschland
Raum: 1.424

  1. 2021

    1. Weißhaupt, David; Funk, Hannes S.; Sürgers, Christoph; u. a. (2021): Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics, in: 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), (2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)), S. 45–49, doi: 10.23919/MIPRO52101.2021.9596924.
    2. Choudhary, Sumit; Schwarz, Daniel; Funk, Hannes S.; u. a. (2021): Impact of Charge Trapping On Epitaxial p-Ge-on-p-Si and HfO2 Based Al/HfO2/p-Ge-on-p-Si/Al Structures Using Kelvin Probe Force Microscopy and Constant Voltage Stress, in: IEEE Transactions on Nanotechnology, (IEEE Transactions on Nanotechnology), Jg. 20, S. 346–355, doi: 10.1109/TNANO.2021.3069820.
    3. Berkmann, F.; Ayasse, M.; Mörz, F.; u. a. (2021): Titanium and Nickel as alternative materials for mid Infrared Plasmonic, in: 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), (2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)), S. 36–39, doi: 10.23919/MIPRO52101.2021.9597155.
    4. Berkmann, F.; Ayasse, M.; Schlipf, J.; u. a. (2021): Plasmonic gratings from highly doped Ge1−ySny films on Si, in: Journal of Physics D: Applied Physics, (Journal of Physics D: Applied Physics), Jg. 54, Nr. 445109, doi: 10.1088/1361-6463/ac1f51.
    5. Schlipf, Jon; Tetzner, Henriette; Spirito, Davide; u. a. (2021): Raman shifts in MBE-grown SixGe1 − x − ySny alloys with large Si content, in: Journal of Raman Spectroscopy, (Journal of Raman Spectroscopy), Jg. 52, Nr. 6, S. 1167–1175, doi: https://doi.org/10.1002/jrs.6098.
    6. Schwarz, D.; Schäfer, S. C.; Seidel, L.; u. a. (2021): MBE-Grown Ge0.92Sn0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge0.92Sn0.08 Substrate, in: 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), (2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)), S. 50–54, doi: 10.23919/MIPRO52101.2021.9596634.
    7. Marchionni, A.; Zucchetti, C.; Ciccacci, F.; u. a. (2021): Inverse spin-Hall effect in GeSn, in: Applied Physics Letters, (Applied Physics Letters), Jg. 118, Nr. 21, S. 212402, doi: 10.1063/5.0046129.
    8. Funk, H. S.; Weißhaupt, D.; Schwarz, D.; u. a. (2021): Characterization of Fe Micromagnets for Semiconductor Spintronics by In-Field Magnetic Force Microscopy, in: 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), (2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)), S. 31–35, doi: 10.23919/MIPRO52101.2021.9596763.

  2. 2020

    1. Dettling, M. M.; Weiβhaupt, D.; Funk, H. S.; u. a. (2020): Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers, in: 2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO), (2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO)), S. 17–21, doi: 10.23919/MIPRO48935.2020.9245273.
    2. "Weißhaupt, David"; "Funk, Hannes Simon"; "Kern, Michal"; u. a. (2020): Weak localization and weak antilocalization in doped Ge1-y Sn y  layers with up to 8% Sn, in: Journal of Physics: Condensed Matter, (Journal of Physics: Condensed Matter), Jg. 33, Nr. 8, S. 085703, doi: 10.1088/1361-648x/abcb68.

  3. 2019

    1. Köllner, Ann-Christin; Yu, Zili; Oehme, Michael; u. a. (2019): A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector, in: 2019 IEEE SENSORS, (2019 IEEE SENSORS), S. 1–4, doi: 10.1109/SENSORS43011.2019.8956731.
    2. Das, B.; Lele, A.; Kumbhare, P.; u. a. (2019): PrxCa1–xMnO3-Based Memory and Si Time-Keeping Selector for Area and Energy Efficient Synapse, in: IEEE Electron Device Letters, (IEEE Electron Device Letters), Jg. 40, Nr. 6, S. 850–853, doi: 10.1109/LED.2019.2914406.
    3. Oehme, M.; Schulze, J. (2019): GeSn/Ge Pin Diodes on Si with Sn Contents up to 14 %, in: The Electrochemical Society Transactions, (The Electrochemical Society Transactions), Jg. 93, Nr. 1, S. 45–48, doi: 10.1149/09301.0045ecst.
    4. Funk, Hannes S.; Kern, Michal; Weisshaupt, David; u. a. (2019): Magnetic Characterization of a Mn Based Ferromagnet on SixGe(1-x-y)Sny with High Sn Content, in: The Electrochemical Society Transactions, (The Electrochemical Society Transactions), Jg. 93, Nr. 1, S. 101–104, doi: 10.1149/09301.0101ecst.
    5. Weiser, Mathias C. J.; Schwarz, D.; Funk, H. S.; u. a. (2019): Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy, in: 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 1–6, doi: 10.23919/MIPRO.2019.8756640.

  4. 2018

    1. Hänel, L. A.; Elogail, Y.; Schwarz, D.; u. a. (2018): Performance of C6H8O7-treated and H- and Cl-passivated Ge-MOS-capacitances on Ge-virtual-substrate on Si(001), in: 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 0027–0031, doi: 10.23919/MIPRO.2018.8400005.
    2. Oehme, Michael; Schwarz, D.; Schulze, Jörg; u. a. (2018): SiGeSn material for integrated optical devices, in: Silicon Photonics: From Fundamental Research to Manufacturing, SPIE (Silicon Photonics: From Fundamental Research to Manufacturing), doi: 10.1117/12.2318011.
    3. Jahandar, Pedram; Weisshaupt, David; Colston, Gerard; u. a. (2018): The effect of Ge precursor on the heteroepitaxy of Ge 1− x Sn x epilayers on a Si (001) substrate, in: Semiconductor Science and Technology, (Semiconductor Science and Technology), Jg. 33, Nr. 3, S. 034003.
    4. Clausen, Caterina J; Fischer, Inga A; Weisshaupt, David; u. a. (2018): Electrical characterization of n-doped SiGeSn diodes with high Sn content, in: Semiconductor Science and Technology, (Semiconductor Science and Technology), Jg. 33, Nr. 12, S. 124017, doi: https://doi.org/10.1088/1361-6641/aae3ab.
    5. Das, B.; Schulze, J.; Ganguly, U. (2018): Transient Phenomena in Sub-Bandgap Impact Ionization in Si n-i-p-i-n Diode, in: IEEE Transactions on Electron Devices, (IEEE Transactions on Electron Devices), Jg. 65, Nr. 8, S. 3414–3420, doi: 10.1109/TED.2018.2846360.
    6. Das, B.; Schulze, J.; Ganguly, U. (2018): Ultra-Low Energy LIF Neuron Using Si NIPIN Diode for Spiking Neural Networks, in: IEEE Electron Device Letters, (IEEE Electron Device Letters), Jg. 39, Nr. 12, S. 1832–1835, doi: 10.1109/LED.2018.2876684.
    7. Zhang, W.; Kasper, E.; Schulze, J. (2018): An 82-GHz 14.6-mW Output Power Silicon Impact Ionization Avalanche Transit Time Transmitter With Monolithically Integrated Coplanar Waveguide Patch Antenna, in: IEEE Transactions on Microwave Theory and Techniques, (IEEE Transactions on Microwave Theory and Techniques), S. 1–10, doi: 10.1109/TMTT.2018.2876220.
    8. Bechler, Stefan; Kern, Michal; Funk, Hannes Simon; u. a. (2018): Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111), in: Semiconductor Science and Technology, (Semiconductor Science and Technology), Jg. 33, Nr. 9, S. 095008, doi: https://doi.org/10.1088/1361-6641/aad4cf.
    9. Clausen, C. J.; Fischer, I. A.; Hoppe, N.; u. a. (2018): Tunnel Injection into Group IV Semiconductors and its Application to Light-Emitting Devices, in: 2018 IEEE Photonics Society Summer Topical Meeting Series (SUM), (2018 IEEE Photonics Society Summer Topical Meeting Series (SUM)), S. 29–30, doi: 10.1109/PHOSST.2018.8456688.
    10. Prucnal, S; Berencén, Y; Wang, M; u. a. (2018): Ex situ n + doping of GeSn alloys via non-equilibrium processing, in: Semiconductor Science and Technology, (Semiconductor Science and Technology), Jg. 33, Nr. 6, S. 065008, doi: 10.1088/1361-6641/aabe05.

  5. 2017

    1. Funk, H. S.; Ng, J.; Kamimura, N.; u. a. (2017): Local growth of graphene on Cu and Cu0.88Ni0.12 foil substrates, in: 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 31–36, doi: 10.23919/MIPRO.2017.7973386.
    2. Fischer, I. A.; Augel, L.; Berrier, A.; u. a. (2017): (Si)GeSn plasmonics, in: 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM), (2017 IEEE Photonics Society Summer Topical Meeting Series (SUM)), S. 15–16, doi: 10.1109/PHOSST.2017.8012628.
    3. Schlipf, J.; Frieiro, J. L.; Fischer, I. A.; u. a. (2017): Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy, in: 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 37–42, doi: 10.23919/MIPRO.2017.7973387.
    4. Rolseth, E. G.; Blech, A.; Fischer, I. A.; u. a. (2017): Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges, in: 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 57–65, doi: 10.23919/MIPRO.2017.7973391.
    5. Weisshaupt, D.; Jahandar, P.; Colston, G.; u. a. (2017): Impact of Sn segregation on Ge1−xSnx epi-layers growth by RP-CVD, in: 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 43–47, doi: 10.23919/MIPRO.2017.7973388.
    6. Fischer, Inga A; Berrier, Audrey; Hornung, Florian; u. a. (2017): Optical critical points of SixGe1-x-ySny alloys with high Si content, in: Semiconductor Science and Technology, (Semiconductor Science and Technology), Jg. 32, Nr. 12, S. 124004, doi: https://doi.org/10.1088/1361-6641/aa95d3.
    7. Kormoš, L.; Kratzer, M.; Kostecki, K.; u. a. (2017): Surface analysis of epitaxially grown GeSn alloys with Sn contents between 15% and 18%, in: Surface and Interface Analysis, (Surface and Interface Analysis), Jg. 49, S. 297–302.
    8. Khosla, R.; Rolseth, E. G.; Kumar, P.; u. a. (2017): Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories, in: IEEE Transactions on Device and Materials Reliability, (IEEE Transactions on Device and Materials Reliability), Jg. 17, Nr. 1, S. 80–89, doi: 10.1109/TDMR.2017.2659760.
    9. Perova, T. S.; Kasper, E.; Oehme, M.; u. a. (2017): Features of polarized Raman spectra for homogeneous and non-homogeneous compressively strained Ge1−ySny alloys, in: Journal of Raman Spectroscopy, (Journal of Raman Spectroscopy), Jg. 48, Nr. 7, S. 993–1001, doi: 10.1002/jrs.5160.

  6. 2016

    1. Chang, Li-Te; Fischer, Inga Anita; Tang, Jianshi; u. a. (2016): Electrical detection of spin transport in Si two-dimensional electron gas systems, in: Nanotechnology, (Nanotechnology), Jg. 27, Nr. 36, S. 365701.
    2. Augel, L.; Fischer, I. A.; Hornung, F.; u. a. (2016): Ellipsometric characterization of doped Ge0.95Sn0.05 films in the infrared range for plasmonic applications, in: Opt. Lett., OSA (Opt. Lett.), Jg. 41, Nr. 18, S. 4398--4400, doi: 10.1364/OL.41.004398.
    3. Wendav, Torsten; Fischer, Inga A.; Montanari, Michele; u. a. (2016): Compositional dependence of the band-gap of Ge1−x−ySixSny alloys, in: Appl. Phys. Lett., American Institute of Physics (Appl. Phys. Lett.), Jg. 108, Nr. 24, S. 242104--, doi: 10.1063/1.4953784.
    4. Schwartz, Bernhard; Saring, Philipp; Arguirov, Tzanimir; u. a. (2016): Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers, in: Gettering and Defect Engineering in Semiconductor Technology XVI, Trans Tech Publications (Gettering and Defect Engineering in Semiconductor Technology XVI), S. 361--367, doi: 10.4028/www.scientific.net/SSP.242.361.
    5. Fischer, I. A.; Oliveira, F.; Benedetti, A.; u. a. (2016): (Si)GeSn nanostructures for optoelectronic device applications, in: 2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), (2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 1–4, doi: 10.1109/MIPRO.2016.7522099.
    6. Koerner, R.; Oehme, M.; Kostecki, K.; u. a. (2016): The Zener-Emitter: Electron injection by direct-tunneling in Ge LEDs for the on-chip Si light source, in: 2016 74th Annual Device Research Conference (DRC), (2016 74th Annual Device Research Conference (DRC)), S. 1–2, doi: 10.1109/DRC.2016.7548478.
    7. Srinivasan, V S Senthil; Fischer, Inga A; Augel, Lion; u. a. (2016): Contact resistivities of antimony-doped n-type Ge 1− x Sn x, in: Semiconductor Science and Technology, (Semiconductor Science and Technology), Jg. 31, Nr. 8, S. 08LT01.
    8. Wendav, T.; Fischer, Inga Anita; Virgilio, M.; u. a. (2016): Photoluminescence from ultrathin Ge-rich multiple quantum wells observed    up to room temperature: Experiments and modeling, in: PHYSICAL REVIEW B, AMER PHYSICAL SOC (PHYSICAL REVIEW B), Jg. 94, Nr. 24, doi: 10.1103/PhysRevB.94.245304.
    9. Koerner, R.; Schwaiz, D.; Fischer, I. A.; u. a. (2016): The Zener-Emitter: A novel superluminescent Ge optical waveguide-amplifier with 4.7 dB gain at 92 mA based on free-carrier modulation by direct Zener tunneling monolithically integrated on Si, in: 2016 IEEE International Electron Devices Meeting (IEDM), (2016 IEEE International Electron Devices Meeting (IEDM)), S. 22.5.1-22.5.4, doi: 10.1109/IEDM.2016.7838474.
    10. Zhang, Wogong; Yamamoto, Yuji; Oehme, Michael; u. a. (2016): S-parameter characterization and lumped-element modelling of    millimeter-wave single-drift impact-ionization avalanche transit-time    diode, in: JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD (JAPANESE JOURNAL OF APPLIED PHYSICS), Jg. 55, Nr. 4, SI, doi: 10.7567/JJAP.55.04EF03.
    11. Oehme, Michael; Gollhofer, Martin; Kostecki, Konrad; u. a. (2016): Ge and GeSn Light Emitters on Si, in: Gettering and Defect Engineering in Semiconductor Technology XVI, Trans Tech Publications (Gettering and Defect Engineering in Semiconductor Technology XVI), S. 353--360, doi: 10.4028/www.scientific.net/SSP.242.353.
    12. Fischer, Inga A.; Augel, Lion; Kropp, Timo; u. a. (2016): Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of nanoantenna size on light scattering into waveguide modes, in: Applied Physics Letters, (Applied Physics Letters), Jg. 108, Nr. 7, doi: http://dx.doi.org/10.1063/1.4942393.
    13. Das, B.; Sushama, S.; Schulze, J.; u. a. (2016): Sub-0.2 V Impact Ionization in Si n-i-p-i-n Diode, in: IEEE Transactions on Electron Devices, (IEEE Transactions on Electron Devices), Jg. 63, Nr. 12, S. 4668–4673, doi: 10.1109/TED.2016.2620986.

  7. 2015

    1. Haehnel, D.; Fischer, I. A.; Hornung, A.; u. a. (2015): Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content, in: IEEE Transactions on Electron Devices, (IEEE Transactions on Electron Devices), Jg. 62, Nr. 1, S. 36–43, doi: 10.1109/TED.2014.2371065.
    2. Mandapati, R.; Shrivastava, S.; Sushama, S.; u. a. (2015): Improved Off-Current and Modeling in Sub-430 °C Si p-i-n Selector for Unipolar Resistive Random Access Memory, in: IEEE Electron Device Letters, (IEEE Electron Device Letters), Jg. 36, Nr. 12, S. 1310–1313, doi: 10.1109/LED.2015.2491221.
    3. Oliveira, F; Fischer, I. A.; Benedetti, A; u. a. (2015): Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis, in: Journal of Applied Physics, American Institute of Physics (Journal of Applied Physics), Jg. 117, Nr. 12, S. 125706--, doi: 10.1063/1.4915939.
    4. Oliveira, F; Fischer, I. A.; Benedetti, A; u. a. (2015): Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy, in: Appl. Phys. Lett., American Institute of Physics (Appl. Phys. Lett.), Jg. 107, Nr. 26, S. 262102--, doi: 10.1063/1.4938746.
    5. Fischer, Inga A.; Augel, Lion; Jitpakdeebodin, Songchai; u. a. (2015): Plasmonics-integrated Ge PIN-photodetectors: efficiency enhancement by Al nanoantennas and plasmon detection, in: Kallol Bhattacharya (Hrsg.), International Conference on Optics and Photonics 2015, SPIE (International Conference on Optics and Photonics 2015), doi: 10.1117/12.2192161.
    6. Schwartz, Bernhard; Oehme, Michael; Kostecki, Konrad; u. a. (2015): Electroluminescence of GeSn/Ge MQW LEDs on Si substrate, in: Opt. Lett., OSA (Opt. Lett.), Jg. 40, Nr. 13, S. 3209--3212, doi: 10.1364/OL.40.003209.
    7. Schwartz, B.; Arguirov, T.; Kittler, M.; u. a. (2015): Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers, in: Graham T. Reed und Michael R. Watts (Hrsg.), Silicon Photonics X, SPIE (Silicon Photonics X), doi: 10.1117/12.2080816.
    8. Fischer, Inga A.; Wendav, Torsten; Augel, Lion; u. a. (2015): Growth and characterization of SiGeSn quantum well photodiodes, in: Opt. Express, OSA (Opt. Express), Jg. 23, Nr. 19, S. 25048--25057, doi: 10.1364/OE.23.025048.
    9. Schulze, Jörg; Blech, Andreas; Datta, Arnab; u. a. (2015): Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors, in: Solid-State Electronics, Elsevier BV (Solid-State Electronics), Jg. 110, S. 59--64, doi: 10.1016/j.sse.2015.01.013.
    10. Koerner, Roman; Oehme, Michael; Gollhofer, Martin; u. a. (2015): Electrically pumped lasing from Ge Fabry-Perot resonators on Si, in: Opt. Express, OSA (Opt. Express), Jg. 23, Nr. 11, S. 14815--14822, doi: 10.1364/OE.23.014815.
    11. Steglich, M; Oehme, M; Käsebier, T; u. a. (2015): Ge-on-Si photodiode with black silicon boosted responsivity, in: Appl. Phys. Lett., American Institute of Physics (Appl. Phys. Lett.), Jg. 107, Nr. 5, S. 051103--, doi: 10.1063/1.4927836.

  8. 2014

    1. Kostecki, K.; Oehme, M.; Koerner, R.; u. a. (2014): Virtual Substrate Technology for Ge1-XSnX Heteroepitaxy on Si Substrates, in: ECS Transactions, The Electrochemical Society (ECS Transactions), Jg. 64, Nr. 6, S. 811--818, doi: 10.1149/06406.0811ecst.
    2. Oehme, Michael; Kostecki, Konrad; Ye, Kaiheng; u. a. (2014): GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz, in: Opt. Express, OSA (Opt. Express), Jg. 22, Nr. 1, S. 839--846, doi: 10.1364/OE.22.000839.
    3. Oehme, M.; Widmann, D.; Kostecki, K.; u. a. (2014): GeSn/Ge multiquantum well photodetectors on Si substrates, in: Opt. Lett., OSA (Opt. Lett.), Jg. 39, Nr. 16, S. 4711--4714, doi: 10.1364/OL.39.004711.
    4. Schmid, Marc; Oehme, Michael; Gollhofer, Martin; u. a. (2014): Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes, in: Thin Solid Films, Elsevier BV (Thin Solid Films), Jg. 557, S. 351--354, doi: 10.1016/j.tsf.2013.08.041.
    5. Stefanov, Stefan; Serra, Carmen; Benedetti, Alessandro; u. a. (2014): Structure and composition of Silicon–Germanium–Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced Epitaxy, in: Microelectronic Engineering, Elsevier BV (Microelectronic Engineering), Jg. 125, S. 18--21, doi: 10.1016/j.mee.2014.03.017.
    6. Fischer, Inga Anita; Chang, Li-Te; Sürgers, Christoph; u. a. (2014): Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si, in: Applied Physics Letters, (Applied Physics Letters), Jg. 105, Nr. 22, S. 222408, doi: 10.1063/1.4903233.
    7. Chiussi, S.; Stefanov, S.; Benedetti, A.; u. a. (2014): (Invited) UV Excimer Laser Assisted Heteroepitaxy of (Si)GeSn on Si(100), in: ECS Transactions, The Electrochemical Society (ECS Transactions), Jg. 64, Nr. 6, S. 115--125, doi: 10.1149/06406.0115ecst.
    8. Oehme, M; Kostecki, K; Schmid, M; u. a. (2014): Franz-Keldysh effect in GeSn pin photodetectors, in: Appl. Phys. Lett., American Institute of Physics (Appl. Phys. Lett.), Jg. 104, Nr. 16, S. 161115--, doi: 10.1063/1.4873935.
    9. Oehme, M.; Kostecki, K.; Arguirov, T.; u. a. (2014): GeSn Heterojunction LEDs on Si Substrates, in: IEEE Photonics Technology Letters, (IEEE Photonics Technology Letters), Jg. 26, Nr. 2, S. 187–189, doi: 10.1109/LPT.2013.2291571.
    10. Oehme, Michael; Kostecki, Konrad; Schmid, Marc; u. a. (2014): Epitaxial growth of strained and unstrained GeSn alloys up to 25\% Sn, in: Thin Solid Films, Elsevier BV (Thin Solid Films), Jg. 557, S. 169--172, doi: 10.1016/j.tsf.2013.10.064.
    11. Zhang, W.; Ye, K.; Bechler, S.; u. a. (2014): A reliable 40 GHz opto-electrical system for characterization of frequency response of Ge PIN photo detectors, in: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), (2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)), S. 117–118, doi: 10.1109/ISTDM.2014.6874649.

  9. 2013

    1. Fischer, I. A.; Surgers, C.; Petit, M.; u. a. (2013): (Invited) Mn5Ge3C0.8 Contacts for Spin Injection Into Ge, in: ECS Transactions, The Electrochemical Society (ECS Transactions), Jg. 58, Nr. 9, S. 29--36, doi: 10.1149/05809.0029ecst.
    2. Arguirov, Tzanimir; Vyvenko, Oleg; Oehme, Michael; u. a. (2013): Dislocation luminescence in highly doped degenerated germanium at room temperature, in: physica status solidi c, (physica status solidi c), Jg. 10, Nr. 1, S. 56–59, doi: 10.1002/pssc.201200395.
    3. Kaschel, Mathias; Schmid, Marc; Gollhofer, Martin; u. a. (2013): Room-temperature electroluminescence from tensile strained double-heterojunction Germanium pin LEDs on Silicon substrates, in: Solid-State Electronics, Elsevier BV (Solid-State Electronics), Jg. 83, S. 87--91, doi: 10.1016/j.sse.2013.01.041.
    4. Fischer, I A; Gebauer, J; Rolseth, E; u. a. (2013): Ferromagnetic Mn 5 Ge 3 C 0.8 contacts on Ge: work function and specific contact resistivity, in: Semiconductor Science and Technology, (Semiconductor Science and Technology), Jg. 28, Nr. 12, S. 125002.
    5. Schmid, M.; Kaschel, M.; Gollhofer, M.; u. a. (2013): Franz-Keldysh effect of Ge-on-Si pin diodes at common chip temperatures, in: Jean-Marc Fédéli, Laurent Vivien, und Meint K. Smit (Hrsg.), Integrated Photonics: Materials, Devices, and Applications II, SPIE (Integrated Photonics: Materials, Devices, and Applications II), doi: 10.1117/12.2017168.
    6. Fischer, I. A.; Bakibillah, A. S. M.; Golve, M.; u. a. (2013): Silicon tunneling field-effect transistors with tunneling in line with the gate field, in: IEEE Electron Device Letters, (IEEE Electron Device Letters), Jg. 34, Nr. 2, S. 154–156, doi: 10.1109/LED.2012.2228250.
    7. Oehme, Michael; Gollhofer, Martin; Widmann, Daniel; u. a. (2013): Direct bandgap narrowing in Ge LED’s on Si substrates, in: Opt. Express, OSA (Opt. Express), Jg. 21, Nr. 2, S. 2206--2211, doi: 10.1364/OE.21.002206.
    8. Chang, L-T; Han, W; Zhou, Y; u. a. (2013): Comparison of spin lifetimes in n -Ge characterized between three-terminal and four-terminal nonlocal Hanle measurements, in: Semiconductor Science and Technology, (Semiconductor Science and Technology), Jg. 28, Nr. 1, S. 015018.
    9. Oehme, M.; Buca, D.; Kostecki, K.; u. a. (2013): Epitaxial growth of highly compressively strained GeSn alloys up to 12.5\% Sn, in: Journal of Crystal Growth, Elsevier BV (Journal of Crystal Growth), Jg. 384, S. 71--76, doi: 10.1016/j.jcrysgro.2013.09.018.
    10. Oehme, M.; Kasper, E.; Schulze, J. (2013): GeSn Heterojunction Diode: Detector and Emitter in One Device, in: ECS Journal of Solid State Science and Technology, The Electrochemical Society (ECS Journal of Solid State Science and Technology), Jg. 2, Nr. 4, S. R76--R78, doi: 10.1149/2.002305jss.

  10. 2012

    1. Stefanov, S; Conde, J. C.; Benedetti, A; u. a. (2012): Silicon germanium tin alloys formed by pulsed laser induced epitaxy, in: Appl. Phys. Lett., American Institute of Physics (Appl. Phys. Lett.), Jg. 100, Nr. 20, S. 204102--, doi: 10.1063/1.4714768.
    2. Karmous, Alim; Fischer, Inga A.; Kirfel, Olaf; u. a. (2012): Recent developments in Ge dots grown on pit-patterned surfaces, in: physica status solidi (b), (physica status solidi (b)), Jg. 249, Nr. 4, S. 764–772, doi: 10.1002/pssb.201100779.
    3. Wiesner, Michael; Bommer, Moritz; Schulz, Wolfgang-Michael; u. a. (2012): Epitaxially Grown Indium Phosphide Quantum Dots on a Virtual Ge Substrate Realized on Si(001), in: Applied Physics Express, (Applied Physics Express), Jg. 5, Nr. 4, S. 042001.
    4. Schmid, M.; Kaschel, M.; Gollhofer, M.; u. a. (2012): Franz–Keldysh effect of germanium-on-silicon p–i–n diodes within a wide temperature range, in: Thin Solid Films, Elsevier BV (Thin Solid Films), Jg. 525, S. 110--114, doi: 10.1016/j.tsf.2012.10.087.
    5. Stefanov, S.; Conde, J.C.; Benedetti, A.; u. a. (2012): Laser assisted formation of binary and ternary Ge/Si/Sn alloys, in: Thin Solid Films, Elsevier BV (Thin Solid Films), Jg. 520, Nr. 8, S. 3262--3265, doi: 10.1016/j.tsf.2011.10.101.
    6. Fischer, Inga A.; Wu, Jyh-Lih; Vogelgesang, Ralf; u. a. (2012): Towards electrical detection of plasmons in all-silicon pin-diodes, in: physica status solidi (b), (physica status solidi (b)), Jg. 249, Nr. 4, S. 773–777, doi: 10.1002/pssb.201100774.
    7. Kasper, E.; Werner, J.; Oehme, M.; u. a. (2012): Growth of silicon based germanium tin alloys, in: Thin Solid Films, Elsevier BV (Thin Solid Films), Jg. 520, Nr. 8, S. 3195--3200, doi: 10.1016/j.tsf.2011.10.114.
    8. Kasper, E.; Oehme, M.; Arguirov, T.; u. a. (2012): Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes, in: Advances in OptoElectronics, (Advances in OptoElectronics), Jg. 2012, S. 4.
    9. Werner, J.; Oehme, M.; Schirmer, A.; u. a. (2012): Molecular beam epitaxy grown GeSn p-i-n photodetectors integrated on Si, in: Thin Solid Films, Elsevier BV (Thin Solid Films), Jg. 520, Nr. 8, S. 3361--3364, doi: 10.1016/j.tsf.2011.10.111.

  11. 2011

    1. Arguirov, Tzanimir; Kittler, Martin; Oehme, Michael; u. a. (2011): Room Temperature Direct Band-Gap Emission from an Unstrained Ge P-I-N LED on Si, in: Gettering and Defect Engineering in Semiconductor Technology XIV, Trans Tech Publications (Gettering and Defect Engineering in Semiconductor Technology XIV), S. 25--30, doi: 10.4028/www.scientific.net/SSP.178-179.25.
    2. Werner, J; Oehme, M; Schmid, M; u. a. (2011): Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy, in: Appl. Phys. Lett., American Institute of Physics (Appl. Phys. Lett.), Jg. 98, Nr. 6, S. 061108--, doi: 10.1063/1.3555439.
    3. Kaschel, M.; Schmid, M.; Oehme, M.; u. a. (2011): Germanium photodetectors on Silicon-on-insulator grown with differential molecular beam epitaxy in silicon wells, in: Solid-State Electronics, Elsevier BV (Solid-State Electronics), Jg. 60, Nr. 1, S. 105--111, doi: 10.1016/j.sse.2011.01.048.
    4. Zhou, Yi; Han, Wei; Chang, Li-Te; u. a. (2011): Electrical spin injection and transport in germanium, in: Phys. Rev. B, American Physical Society (Phys. Rev. B), Jg. 84, Nr. 12, S. 125323, doi: 10.1103/PhysRevB.84.125323.
    5. Oehme, M.; Werner, J.; Gollhofer, M.; u. a. (2011): Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si, in: IEEE Photonics Technology Letters, (IEEE Photonics Technology Letters), Jg. 23, Nr. 23, S. 1751–1753, doi: 10.1109/LPT.2011.2169052.
    6. Hähnel, D.; Oehme, M.; Sarlija, M.; u. a. (2011): Germanium vertical Tunneling Field-Effect Transistor, in: Solid-State Electronics, Elsevier BV (Solid-State Electronics), Jg. 62, Nr. 1, S. 132--137, doi: 10.1016/j.sse.2011.03.011.

  12. 2010

    1. Oehme, M.; Kaschel, M.; Werner, J.; u. a. (2010): Germanium on Silicon Photodetectors with Broad Spectral Range, in: Journal of The Electrochemical Society, The Electrochemical Society (Journal of The Electrochemical Society), Jg. 157, Nr. 2, S. H144, doi: 10.1149/1.3261854.
    2. Oehme, M.; Kirfel, O.; Werner, J.; u. a. (2010): Antimony doped Si Esaki diodes without post growth annealing, in: Thin Solid Films, Elsevier BV (Thin Solid Films), Jg. 518, Nr. 6, S. S65--S67, doi: 10.1016/j.tsf.2009.10.057.
    3. Oehme, M.; Sarlija, M.; Hahnel, D.; u. a. (2010): Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010), in: IEEE Transactions on Electron Devices, (IEEE Transactions on Electron Devices), Jg. 57, Nr. 11, S. 2857–2863, doi: 10.1109/TED.2010.2068395.
    4. Oehme, M; Karmous, A; Sarlija, M; u. a. (2010): Ge quantum dot tunneling diode with room temperature negative differential resistance, in: Appl. Phys. Lett., American Institute of Physics (Appl. Phys. Lett.), Jg. 97, Nr. 1, S. 012101--, doi: 10.1063/1.3462069.

  13. 2009

    1. Oehme, M; Hähnel, D; Werner, J; u. a. (2009): Si Esaki diodes with high peak to valley current ratios, in: Appl. Phys. Lett., American Institute of Physics (Appl. Phys. Lett.), Jg. 95, Nr. 24, S. 242109--, doi: 10.1063/1.3274136.
    2. Karmous, A; Kirfel, O; Oehme, M; u. a. (2009): MBE growth of Ge quantum dot structures in oxide windows, in: IOP Conference Series: Materials Science and Engineering, (IOP Conference Series: Materials Science and Engineering), Jg. 6, Nr. 1, S. 012020.

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