Dieses Bild zeigt Schulze

Herr Prof. Dr. habil.

Jörg Schulze

Direktor
Institut für Halbleitertechnik

Kontakt

+49 711 685-68003
+49 711 685-68044

Visitenkarte (VCF)

Pfaffenwaldring 47
70569 Stuttgart
Deutschland
Raum: 1.424

  1. 2018

    1. Kawaguchi, Y.; Augel, L.; Uchida, H.; u. a. (2018): „Simulation-based optimization of Ge-PIN-photodiodes with Al nanohole arrays for refractive index sensing“. In: 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). (2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 0023–0026, doi: 10.23919/MIPRO.2018.8400004.
    2. Oehme, Michael; Schwarz, D.; Schulze, Jörg; u. a. (2018): „SiGeSn material for integrated optical devices“. In: Silicon Photonics: From Fundamental Research to Manufacturing. SPIE (Silicon Photonics: From Fundamental Research to Manufacturing), doi: 10.1117/12.2318011.
    3. Jahandar, Pedram; Weisshaupt, David; Colston, Gerard; u. a. (2018): „The effect of Ge precursor on the heteroepitaxy of Ge 1− x Sn x epilayers on a Si (001) substrate“. In: Semiconductor Science and Technology. (Semiconductor Science and Technology), 33 (3), S. 034003.
    4. Clausen, Caterina J; Fischer, Inga A; Weisshaupt, David; u. a. (2018b): „Electrical characterization of n-doped SiGeSn diodes with high Sn content“. In: Semiconductor Science and Technology. (Semiconductor Science and Technology), 33 (12), S. 124017, doi: https://doi.org/10.1088/1361-6641/aae3ab.
    5. Das, B.; Schulze, J.; Ganguly, U. (2018): „Ultra-Low Energy LIF Neuron Using Si NIPIN Diode for Spiking Neural Networks“. In: IEEE Electron Device Letters. (IEEE Electron Device Letters), 39 (12), S. 1832–1835, doi: 10.1109/LED.2018.2876684.
    6. Augel, Lion; Kawaguchi, Yuma; Bechler, Stefan; u. a. (2018): „Integrated Collinear Refractive Index Sensor with Ge PIN Photodiodes“. In: ACS Photonics. American Chemical Society (ACS) (ACS Photonics), doi: 10.1021/acsphotonics.8b01067.
    7. Zhang, W.; Kasper, E.; Schulze, J. (2018): „An 82-GHz 14.6-mW Output Power Silicon Impact Ionization Avalanche Transit Time Transmitter With Monolithically Integrated Coplanar Waveguide Patch Antenna“. In: IEEE Transactions on Microwave Theory and Techniques. (IEEE Transactions on Microwave Theory and Techniques), S. 1–10, doi: 10.1109/TMTT.2018.2876220.
    8. Bechler, Stefan; Kern, Michal; Funk, Hannes Simon; u. a. (2018): „Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111)“. In: Semiconductor Science and Technology. (Semiconductor Science and Technology), 33 (9), S. 095008, doi: https://doi.org/10.1088/1361-6641/aad4cf.
    9. Schlipf, J.; Itabashi, Y.; Goto, T.; u. a. (2018): „FDTD simulation of enhanced Faraday effect in plasmonic composite structures with rectangularly arranged Au particles.“. In: 2018 IEEE International Magnetic Conference (INTERMAG). (2018 IEEE International Magnetic Conference (INTERMAG)), S. 1–2, doi: 10.1109/INTMAG.2018.8508694.
    10. Elogail, Yasmine; Fischer, Inga A; Wendav, Torsten; u. a. (2018): „Enhancement of Ge-based p-channel vertical FET performance by channel engineering using planar doping and a Ge/Si x Ge 1– x – y Sn y heterostructure model for low power FET applications“. In: Semiconductor Science and Technology. (Semiconductor Science and Technology), 33 (11), S. 114001, doi: 10.1088/1361-6641/aae001.
    11. Clausen, C. J.; Fischer, I. A.; Hoppe, N.; u. a. (2018a): „Tunnel Injection into Group IV Semiconductors and its Application to Light-Emitting Devices“. In: 2018 IEEE Photonics Society Summer Topical Meeting Series (SUM). (2018 IEEE Photonics Society Summer Topical Meeting Series (SUM)), S. 29–30, doi: 10.1109/PHOSST.2018.8456688.
    12. Prucnal, S; Berencén, Y; Wang, M; u. a. (2018): „Ex situ n + doping of GeSn alloys via non-equilibrium processing“. In: Semiconductor Science and Technology. (Semiconductor Science and Technology), 33 (6), S. 065008, doi: 10.1088/1361-6641/aabe05.
  2. 2017

    1. Funk, H. S.; Ng, J.; Kamimura, N.; u. a. (2017): „Local growth of graphene on Cu and Cu0.88Ni0.12 foil substrates“. In: 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). (2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 31–36, doi: 10.23919/MIPRO.2017.7973386.
    2. Fischer, I. A.; Augel, L.; Berrier, A.; u. a. (2017a): „(Si)GeSn plasmonics“. In: 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM). (2017 IEEE Photonics Society Summer Topical Meeting Series (SUM)), S. 15–16, doi: 10.1109/PHOSST.2017.8012628.
    3. Koerner, R.; Fischer, I. A.; Oehme, M.; u. a. (2017a): „Zener tunnel-injection for Ge optical amplifiers, lasers and modulators (invited)“. In: 2017 IEEE 14th International Conference on Group IV Photonics (GFP). (2017 IEEE 14th International Conference on Group IV Photonics (GFP)), S. 11–12, doi: 10.1109/GROUP4.2017.8082171.
    4. Schlipf, J.; Frieiro, J. L.; Fischer, I. A.; u. a. (2017): „Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy“. In: 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). (2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 37–42, doi: 10.23919/MIPRO.2017.7973387.
    5. Rolseth, E. G.; Blech, A.; Fischer, I. A.; u. a. (2017): „Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges“. In: 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). (2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 57–65, doi: 10.23919/MIPRO.2017.7973391.
    6. Augel, L.; Körner, R.; Bechler, S.; u. a. (2017b): „Ge PIN photodetectors with nanohole arrays for refractive index sensing“. In: 2017 IEEE 14th International Conference on Group IV Photonics (GFP). (2017 IEEE 14th International Conference on Group IV Photonics (GFP)), S. 161–162, doi: 10.1109/GROUP4.2017.8082246.
    7. Weisshaupt, D.; Jahandar, P.; Colston, G.; u. a. (2017): „Impact of Sn segregation on Ge1−xSnx epi-layers growth by RP-CVD“. In: 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). (2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 43–47, doi: 10.23919/MIPRO.2017.7973388.
    8. Koerner, R; Fischer, I A; Schwarz, D; u. a. (2017b): „MBE grown germanium tunnel-junctions—burstein-moss effect and band-edge luminescence in the Ge Zener-Emitter“. In: Semiconductor Science and Technology. (Semiconductor Science and Technology), 32 (12), S. 124005, doi: 10.1088/1361-6641/aa916f.
    9. Fischer, Inga A; Berrier, Audrey; Hornung, Florian; u. a. (2017b): „Optical critical points of SixGe1-x-ySny alloys with high Si content“. In: Semiconductor Science and Technology. (Semiconductor Science and Technology), 32 (12), S. 124004, doi: https://doi.org/10.1088/1361-6641/aa95d3.
    10. Kormoš, L.; Kratzer, M.; Kostecki, K.; u. a. (2017): „Surface analysis of epitaxially grown GeSn alloys with Sn contents between 15% and 18%“. In: Surface and Interface Analysis. (Surface and Interface Analysis), 49 , S. 297–302.
    11. Schwartz, Bernhard; Oehme, Michael; Koerner, Roman; u. a. (2017): „Luminescence of strained Ge on GeSn virtual substrate grown on Si (001)“. In: Reed, Graham T.; Knights, Andrew P. (Hrsg.) Silicon Photonics XII. SPIE (Silicon Photonics XII), doi: 10.1117/12.2249564.
    12. Khosla, R.; Rolseth, E. G.; Kumar, P.; u. a. (2017): „Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories“. In: IEEE Transactions on Device and Materials Reliability. (IEEE Transactions on Device and Materials Reliability), 17 (1), S. 80–89, doi: 10.1109/TDMR.2017.2659760.
    13. Augel, L.; Berkmann, F.; Latta, D.; u. a. (2017a): „Optofluidic sensor system with Ge PIN photodetector for CMOS-compatible sensing“. In: Microfluidics and Nanofluidics. (Microfluidics and Nanofluidics), 21 (11), S. 169, doi: 10.1007/s10404-017-2007-3.
    14. Perova, T. S.; Kasper, E.; Oehme, M.; u. a. (2017): „Features of polarized Raman spectra for homogeneous and non-homogeneous compressively strained Ge1−ySny alloys“. In: Journal of Raman Spectroscopy. (Journal of Raman Spectroscopy), 48 (7), S. 993–1001, doi: 10.1002/jrs.5160.
  3. 2016

    1. Chang, Li-Te; Fischer, Inga Anita; Tang, Jianshi; u. a. (2016): „Electrical detection of spin transport in Si two-dimensional electron gas systems“. In: Nanotechnology. (Nanotechnology), 27 (36), S. 365701.
    2. Augel, L.; Fischer, I. A.; Hornung, F.; u. a. (2016b): „Ellipsometric characterization of doped Ge0.95Sn0.05 films in the infrared range for plasmonic applications“. In: Opt. Lett. OSA (Opt. Lett.), 41 (18), S. 4398--4400, doi: 10.1364/OL.41.004398.
    3. Zhang, W.; Oehme, M.; Matthies, K.; u. a. (2016a): „Small-signal IMPATT diode characterization for mm-wave power generation in monolithic scenarios“. In: 2016 46th European Solid-State Device Research Conference (ESSDERC). (2016 46th European Solid-State Device Research Conference (ESSDERC)), S. 109–112, doi: 10.1109/ESSDERC.2016.7599600.
    4. Wendav, Torsten; Fischer, Inga A.; Montanari, Michele; u. a. (2016b): „Compositional dependence of the band-gap of Ge1−x−ySixSny alloys“. In: Appl. Phys. Lett. American Institute of Physics (Appl. Phys. Lett.), 108 (24), S. 242104--, doi: 10.1063/1.4953784.
    5. Schwartz, Bernhard; Saring, Philipp; Arguirov, Tzanimir; u. a. (2016): „Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers“. In: Gettering and Defect Engineering in Semiconductor Technology XVI. Trans Tech Publications (Gettering and Defect Engineering in Semiconductor Technology XVI), S. 361--367, doi: 10.4028/www.scientific.net/SSP.242.361.
    6. Fischer, I. A.; Oliveira, F.; Benedetti, A.; u. a. (2016a): „(Si)GeSn nanostructures for optoelectronic device applications“. In: 2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). (2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)), S. 1–4, doi: 10.1109/MIPRO.2016.7522099.
    7. Koerner, R.; Oehme, M.; Kostecki, K.; u. a. (2016a): „The Zener-Emitter: Electron injection by direct-tunneling in Ge LEDs for the on-chip Si light source“. In: 2016 74th Annual Device Research Conference (DRC). (2016 74th Annual Device Research Conference (DRC)), S. 1–2, doi: 10.1109/DRC.2016.7548478.
    8. Srinivasan, V S Senthil; Fischer, Inga A; Augel, Lion; u. a. (2016): „Contact resistivities of antimony-doped n-type Ge 1− x Sn x“. In: Semiconductor Science and Technology. (Semiconductor Science and Technology), 31 (8), S. 08LT01.
    9. Wendav, T.; Fischer, Inga Anita; Virgilio, M.; u. a. (2016a): „Photoluminescence from ultrathin Ge-rich multiple quantum wells observed    up to room temperature: Experiments and modeling“. In: PHYSICAL REVIEW B. AMER PHYSICAL SOC (PHYSICAL REVIEW B), 94 (24), doi: 10.1103/PhysRevB.94.245304.
    10. Koerner, R.; Schwaiz, D.; Fischer, I. A.; u. a. (2016b): „The Zener-Emitter: A novel superluminescent Ge optical waveguide-amplifier with 4.7 dB gain at 92 mA based on free-carrier modulation by direct Zener tunneling monolithically integrated on Si“. In: 2016 IEEE International Electron Devices Meeting (IEDM). (2016 IEEE International Electron Devices Meeting (IEDM)), S. 22.5.1-22.5.4, doi: 10.1109/IEDM.2016.7838474.
    11. Zhang, Wogong; Yamamoto, Yuji; Oehme, Michael; u. a. (2016b): „S-parameter characterization and lumped-element modelling of    millimeter-wave single-drift impact-ionization avalanche transit-time    diode“. In: JAPANESE JOURNAL OF APPLIED PHYSICS. IOP PUBLISHING LTD (JAPANESE JOURNAL OF APPLIED PHYSICS), 55 (4, SI), doi: 10.7567/JJAP.55.04EF03.
    12. Oehme, Michael; Gollhofer, Martin; Kostecki, Konrad; u. a. (2016): „Ge and GeSn Light Emitters on Si“. In: Gettering and Defect Engineering in Semiconductor Technology XVI. Trans Tech Publications (Gettering and Defect Engineering in Semiconductor Technology XVI), S. 353--360, doi: 10.4028/www.scientific.net/SSP.242.353.
    13. Fischer, Inga A.; Augel, Lion; Kropp, Timo; u. a. (2016b): „Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of nanoantenna size on light scattering into waveguide modes“. In: Applied Physics Letters. (Applied Physics Letters), 108 (7), doi: http://dx.doi.org/10.1063/1.4942393.
    14. Augel, L.; Fischer, I. A.; Dunbar, L. A.; u. a. (2016a): „Plasmonic nanohole arrays on Si-Ge heterostructures: an approach for integrated biosensors“. In: Vo-Dinh, Tuan; Lakowicz, Joseph R. (Hrsg.) Plasmonics in Biology and Medicine XIII. SPIE (Plasmonics in Biology and Medicine XIII), doi: 10.1117/12.2212650.
    15. Das, B.; Sushama, S.; Schulze, J.; u. a. (2016): „Sub-0.2 V Impact Ionization in Si n-i-p-i-n Diode“. In: IEEE Transactions on Electron Devices. (IEEE Transactions on Electron Devices), 63 (12), S. 4668–4673, doi: 10.1109/TED.2016.2620986.
  4. 2015

    1. Haehnel, D.; Fischer, I. A.; Hornung, A.; u. a. (2015): „Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content“. In: IEEE Transactions on Electron Devices. (IEEE Transactions on Electron Devices), 62 (1), S. 36–43, doi: 10.1109/TED.2014.2371065.
    2. Zhang, W.; Oehme, M.; Kostecki, K.; u. a. (2015): „Systematic characterization of Silicon IMPATT diode for Monolithic E-band amplifier design“. In: 2015 German Microwave Conference. (2015 German Microwave Conference), S. 135–138, doi: 10.1109/GEMIC.2015.7107771.
    3. Mandapati, R.; Shrivastava, S.; Sushama, S.; u. a. (2015): „Improved Off-Current and Modeling in Sub-430 °C Si p-i-n Selector for Unipolar Resistive Random Access Memory“. In: IEEE Electron Device Letters. (IEEE Electron Device Letters), 36 (12), S. 1310–1313, doi: 10.1109/LED.2015.2491221.
    4. Oliveira, F; Fischer, I. A.; Benedetti, A; u. a. (2015b): „Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis“. In: Journal of Applied Physics. American Institute of Physics (Journal of Applied Physics), 117 (12), S. 125706--, doi: 10.1063/1.4915939.
    5. Oliveira, F; Fischer, I. A.; Benedetti, A; u. a. (2015a): „Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy“. In: Appl. Phys. Lett. American Institute of Physics (Appl. Phys. Lett.), 107 (26), S. 262102--, doi: 10.1063/1.4938746.
    6. Fischer, Inga A.; Augel, Lion; Jitpakdeebodin, Songchai; u. a. (2015a): „Plasmonics-integrated Ge PIN-photodetectors: efficiency enhancement by Al nanoantennas and plasmon detection“. In: Bhattacharya, Kallol (Hrsg.) International Conference on Optics and Photonics 2015. SPIE (International Conference on Optics and Photonics 2015), doi: 10.1117/12.2192161.
    7. Schwartz, Bernhard; Oehme, Michael; Kostecki, Konrad; u. a. (2015b): „Electroluminescence of GeSn/Ge MQW LEDs on Si substrate“. In: Opt. Lett. OSA (Opt. Lett.), 40 (13), S. 3209--3212, doi: 10.1364/OL.40.003209.
    8. Schwartz, B.; Arguirov, T.; Kittler, M.; u. a. (2015a): „Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers“. In: Reed, Graham T.; Watts, Michael R. (Hrsg.) Silicon Photonics X. SPIE (Silicon Photonics X), doi: 10.1117/12.2080816.
    9. Fischer, Inga A.; Wendav, Torsten; Augel, Lion; u. a. (2015b): „Growth and characterization of SiGeSn quantum well photodiodes“. In: Opt. Express. OSA (Opt. Express), 23 (19), S. 25048--25057, doi: 10.1364/OE.23.025048.
    10. Schulze, Jörg; Blech, Andreas; Datta, Arnab; u. a. (2015): „Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors“. In: Solid-State Electronics. Elsevier BV (Solid-State Electronics), 110 , S. 59--64, doi: 10.1016/j.sse.2015.01.013.
    11. Koerner, Roman; Oehme, Michael; Gollhofer, Martin; u. a. (2015): „Electrically pumped lasing from Ge Fabry-Perot resonators on Si“. In: Opt. Express. OSA (Opt. Express), 23 (11), S. 14815--14822, doi: 10.1364/OE.23.014815.
    12. Steglich, M; Oehme, M; Käsebier, T; u. a. (2015): „Ge-on-Si photodiode with black silicon boosted responsivity“. In: Appl. Phys. Lett. American Institute of Physics (Appl. Phys. Lett.), 107 (5), S. 051103--, doi: 10.1063/1.4927836.
  5. 2014

    1. Kostecki, K.; Oehme, M.; Koerner, R.; u. a. (2014): „Virtual Substrate Technology for Ge1-XSnX Heteroepitaxy on Si Substrates“. In: ECS Transactions. The Electrochemical Society (ECS Transactions), 64 (6), S. 811--818, doi: 10.1149/06406.0811ecst.
    2. Ye, K.; Zhang, W.; Oehme, M.; u. a. (2014): „Extraction of GeSn absorption coefficients from photodetector response“. In: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM). (2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)), S. 137–138, doi: 10.1109/ISTDM.2014.6874643.
    3. Oehme, Michael; Kostecki, Konrad; Ye, Kaiheng; u. a. (2014e): „GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz“. In: Opt. Express. OSA (Opt. Express), 22 (1), S. 839--846, doi: 10.1364/OE.22.000839.
    4. Oehme, M.; Widmann, D.; Kostecki, K.; u. a. (2014b): „GeSn/Ge multiquantum well photodetectors on Si substrates“. In: Opt. Lett. OSA (Opt. Lett.), 39 (16), S. 4711--4714, doi: 10.1364/OL.39.004711.
    5. Schmid, Marc; Oehme, Michael; Gollhofer, Martin; u. a. (2014): „Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes“. In: Thin Solid Films. Elsevier BV (Thin Solid Films), 557 , S. 351--354, doi: 10.1016/j.tsf.2013.08.041.
    6. Stefanov, Stefan; Serra, Carmen; Benedetti, Alessandro; u. a. (2014): „Structure and composition of Silicon–Germanium–Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced Epitaxy“. In: Microelectronic Engineering. Elsevier BV (Microelectronic Engineering), 125 , S. 18--21, doi: 10.1016/j.mee.2014.03.017.
    7. Fischer, Inga Anita; Chang, Li-Te; Sürgers, Christoph; u. a. (2014): „Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si“. In: Applied Physics Letters. (Applied Physics Letters), 105 (22), S. 222408, doi: 10.1063/1.4903233.
    8. Chiussi, S.; Stefanov, S.; Benedetti, A.; u. a. (2014): „(Invited) UV Excimer Laser Assisted Heteroepitaxy of (Si)GeSn on Si(100)“. In: ECS Transactions. The Electrochemical Society (ECS Transactions), 64 (6), S. 115--125, doi: 10.1149/06406.0115ecst.
    9. Oehme, M; Kostecki, K; Schmid, M; u. a. (2014c): „Franz-Keldysh effect in GeSn pin photodetectors“. In: Appl. Phys. Lett. American Institute of Physics (Appl. Phys. Lett.), 104 (16), S. 161115--, doi: 10.1063/1.4873935.
    10. Oehme, M.; Kostecki, K.; Arguirov, T.; u. a. (2014a): „GeSn Heterojunction LEDs on Si Substrates“. In: IEEE Photonics Technology Letters. (IEEE Photonics Technology Letters), 26 (2), S. 187–189, doi: 10.1109/LPT.2013.2291571.
    11. Oehme, Michael; Kostecki, Konrad; Schmid, Marc; u. a. (2014d): „Epitaxial growth of strained and unstrained GeSn alloys up to 25\% Sn“. In: Thin Solid Films. Elsevier BV (Thin Solid Films), 557 , S. 169--172, doi: 10.1016/j.tsf.2013.10.064.
  6. 2013

    1. Fischer, I. A.; Surgers, C.; Petit, M.; u. a. (2013b): „(Invited) Mn5Ge3C0.8 Contacts for Spin Injection Into Ge“. In: ECS Transactions. The Electrochemical Society (ECS Transactions), 58 (9), S. 29--36, doi: 10.1149/05809.0029ecst.
    2. Arguirov, Tzanimir; Vyvenko, Oleg; Oehme, Michael; u. a. (2013): „Dislocation luminescence in highly doped degenerated germanium at room temperature“. In: physica status solidi c. (physica status solidi c), 10 (1), S. 56–59, doi: 10.1002/pssc.201200395.
    3. Kaschel, Mathias; Schmid, Marc; Gollhofer, Martin; u. a. (2013b): „Room-temperature electroluminescence from tensile strained double-heterojunction Germanium pin LEDs on Silicon substrates“. In: Solid-State Electronics. Elsevier BV (Solid-State Electronics), 83 , S. 87--91, doi: 10.1016/j.sse.2013.01.041.
    4. Fischer, I A; Gebauer, J; Rolseth, E; u. a. (2013c): „Ferromagnetic Mn 5 Ge 3 C 0.8 contacts on Ge: work function and specific contact resistivity“. In: Semiconductor Science and Technology. (Semiconductor Science and Technology), 28 (12), S. 125002.
    5. Oehme, M.; Kasper, E.; Schulze, J. (2013b): „(Invited) GeSn Photodetection and Electroluminescence Devices on Si“. In: ECS Transactions. The Electrochemical Society (ECS Transactions), 50 (9), S. 583--590, doi: 10.1149/05009.0583ecst.
    6. Kaschel, Mathias; Schmid, Marc; Gollhofer, Martin; u. a. (2013a): „Resistance-capacitance limitation of fast double heterojunction Ge p-i-n photodetectors“. In: Fédéli, Jean-Marc; Vivien, Laurent; Smit, Meint K. (Hrsg.) Integrated Photonics: Materials, Devices, and Applications II. SPIE (Integrated Photonics: Materials, Devices, and Applications II), doi: 10.1117/12.2017008.
    7. Schmid, M.; Kaschel, M.; Gollhofer, M.; u. a. (2013): „Franz-Keldysh effect of Ge-on-Si pin diodes at common chip temperatures“. In: Fédéli, Jean-Marc; Vivien, Laurent; Smit, Meint K. (Hrsg.) Integrated Photonics: Materials, Devices, and Applications II. SPIE (Integrated Photonics: Materials, Devices, and Applications II), doi: 10.1117/12.2017168.
    8. Fischer, I. A.; Bakibillah, A. S. M.; Golve, M.; u. a. (2013a): „Silicon tunneling field-effect transistors with tunneling in line with the gate field“. In: IEEE Electron Device Letters. (IEEE Electron Device Letters), 34 (2), S. 154–156, doi: 10.1109/LED.2012.2228250.
    9. Oehme, Michael; Gollhofer, Martin; Widmann, Daniel; u. a. (2013d): „Direct bandgap narrowing in Ge LED’s on Si substrates“. In: Opt. Express. OSA (Opt. Express), 21 (2), S. 2206--2211, doi: 10.1364/OE.21.002206.
    10. Chang, L-T; Han, W; Zhou, Y; u. a. (2013): „Comparison of spin lifetimes in n -Ge characterized between three-terminal and four-terminal nonlocal Hanle measurements“. In: Semiconductor Science and Technology. (Semiconductor Science and Technology), 28 (1), S. 015018.
    11. Oehme, M.; Buca, D.; Kostecki, K.; u. a. (2013a): „Epitaxial growth of highly compressively strained GeSn alloys up to 12.5\% Sn“. In: Journal of Crystal Growth. Elsevier BV (Journal of Crystal Growth), 384 , S. 71--76, doi: 10.1016/j.jcrysgro.2013.09.018.
    12. Oehme, M.; Kasper, E.; Schulze, J. (2013c): „GeSn Heterojunction Diode: Detector and Emitter in One Device“. In: ECS Journal of Solid State Science and Technology. The Electrochemical Society (ECS Journal of Solid State Science and Technology), 2 (4), S. R76--R78, doi: 10.1149/2.002305jss.
  7. 2012

    1. Stefanov, S; Conde, J. C.; Benedetti, A; u. a. (2012b): „Silicon germanium tin alloys formed by pulsed laser induced epitaxy“. In: Appl. Phys. Lett. American Institute of Physics (Appl. Phys. Lett.), 100 (20), S. 204102--, doi: 10.1063/1.4714768.
    2. Karmous, Alim; Fischer, Inga A.; Kirfel, Olaf; u. a. (2012): „Recent developments in Ge dots grown on pit-patterned surfaces“. In: physica status solidi (b). (physica status solidi (b)), 249 (4), S. 764–772, doi: 10.1002/pssb.201100779.
    3. Wiesner, Michael; Bommer, Moritz; Schulz, Wolfgang-Michael; u. a. (2012): „Epitaxially Grown Indium Phosphide Quantum Dots on a Virtual Ge Substrate Realized on Si(001)“. In: Applied Physics Express. (Applied Physics Express), 5 (4), S. 042001.
    4. Schmid, M.; Kaschel, M.; Gollhofer, M.; u. a. (2012): „Franz–Keldysh effect of germanium-on-silicon p–i–n diodes within a wide temperature range“. In: Thin Solid Films. Elsevier BV (Thin Solid Films), 525 , S. 110--114, doi: 10.1016/j.tsf.2012.10.087.
    5. Stefanov, S.; Conde, J.C.; Benedetti, A.; u. a. (2012a): „Laser assisted formation of binary and ternary Ge/Si/Sn alloys“. In: Thin Solid Films. Elsevier BV (Thin Solid Films), 520 (8), S. 3262--3265, doi: 10.1016/j.tsf.2011.10.101.
    6. Fischer, Inga A.; Wu, Jyh-Lih; Vogelgesang, Ralf; u. a. (2012): „Towards electrical detection of plasmons in all-silicon pin-diodes“. In: physica status solidi (b). (physica status solidi (b)), 249 (4), S. 773–777, doi: 10.1002/pssb.201100774.
    7. Kasper, E.; Werner, J.; Oehme, M.; u. a. (2012b): „Growth of silicon based germanium tin alloys“. In: Thin Solid Films. Elsevier BV (Thin Solid Films), 520 (8), S. 3195--3200, doi: 10.1016/j.tsf.2011.10.114.
    8. Kasper, E.; Oehme, M.; Arguirov, T.; u. a. (2012a): „Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes“. In: Advances in OptoElectronics. (Advances in OptoElectronics), 2012 , S. 4.
    9. Oehme, M; Schmid, M; Kaschel, M; u. a. (2012): „GeSn p-i-n detectors integrated on Si with up to 4% Sn“. In: Appl. Phys. Lett. American Institute of Physics (Appl. Phys. Lett.), 101 (14), S. 141110--, doi: 10.1063/1.4757124.
    10. Werner, J.; Oehme, M.; Schirmer, A.; u. a. (2012): „Molecular beam epitaxy grown GeSn p-i-n photodetectors integrated on Si“. In: Thin Solid Films. Elsevier BV (Thin Solid Films), 520 (8), S. 3361--3364, doi: 10.1016/j.tsf.2011.10.111.
  8. 2011

    1. Arguirov, Tzanimir; Kittler, Martin; Oehme, Michael; u. a. (2011): „Room Temperature Direct Band-Gap Emission from an Unstrained Ge P-I-N LED on Si“. In: Gettering and Defect Engineering in Semiconductor Technology XIV. Trans Tech Publications (Gettering and Defect Engineering in Semiconductor Technology XIV), S. 25--30, doi: 10.4028/www.scientific.net/SSP.178-179.25.
    2. Karmous, A.; Oehme, M.; Werner, J.; u. a. (2011): „Local strained silicon platform based on differential SiGe/Si epitaxy“. In: Journal of Crystal Growth. Elsevier BV (Journal of Crystal Growth), 324 (1), S. 154--156, doi: 10.1016/j.jcrysgro.2011.04.006.
    3. Werner, J; Oehme, M; Schmid, M; u. a. (2011): „Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy“. In: Appl. Phys. Lett. American Institute of Physics (Appl. Phys. Lett.), 98 (6), S. 061108--, doi: 10.1063/1.3555439.
    4. Kaschel, M.; Schmid, M.; Oehme, M.; u. a. (2011): „Germanium photodetectors on Silicon-on-insulator grown with differential molecular beam epitaxy in silicon wells“. In: Solid-State Electronics. Elsevier BV (Solid-State Electronics), 60 (1), S. 105--111, doi: 10.1016/j.sse.2011.01.048.
    5. Zhou, Yi; Han, Wei; Chang, Li-Te; u. a. (2011): „Electrical spin injection and transport in germanium“. In: Phys. Rev. B. American Physical Society (Phys. Rev. B), 84 (12), S. 125323, doi: 10.1103/PhysRevB.84.125323.
    6. Oehme, M.; Werner, J.; Gollhofer, M.; u. a. (2011): „Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si“. In: IEEE Photonics Technology Letters. (IEEE Photonics Technology Letters), 23 (23), S. 1751–1753, doi: 10.1109/LPT.2011.2169052.
    7. Hähnel, D.; Oehme, M.; Sarlija, M.; u. a. (2011): „Germanium vertical Tunneling Field-Effect Transistor“. In: Solid-State Electronics. Elsevier BV (Solid-State Electronics), 62 (1), S. 132--137, doi: 10.1016/j.sse.2011.03.011.
  9. 2010

    1. Oehme, M.; Kaschel, M.; Werner, J.; u. a. (2010a): „Germanium on Silicon Photodetectors with Broad Spectral Range“. In: Journal of The Electrochemical Society. The Electrochemical Society (Journal of The Electrochemical Society), 157 (2), S. H144, doi: 10.1149/1.3261854.
    2. Oehme, M.; Kirfel, O.; Werner, J.; u. a. (2010b): „Antimony doped Si Esaki diodes without post growth annealing“. In: Thin Solid Films. Elsevier BV (Thin Solid Films), 518 (6), S. S65--S67, doi: 10.1016/j.tsf.2009.10.057.
    3. Werner, J.; Oehme, M.; Kasper, E.; u. a. (2010): „Influence of the modulation doping to the mobility of two-dimensional electron gases in Si/SiGe“. In: Thin Solid Films. Elsevier BV (Thin Solid Films), 518 (6), S. S234--S236, doi: 10.1016/j.tsf.2009.10.096.
    4. Oehme, M.; Sarlija, M.; Hahnel, D.; u. a. (2010c): „Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010)“. In: IEEE Transactions on Electron Devices. (IEEE Transactions on Electron Devices), 57 (11), S. 2857–2863, doi: 10.1109/TED.2010.2068395.
    5. Oehme, M; Karmous, A; Sarlija, M; u. a. (2010d): „Ge quantum dot tunneling diode with room temperature negative differential resistance“. In: Appl. Phys. Lett. American Institute of Physics (Appl. Phys. Lett.), 97 (1), S. 012101--, doi: 10.1063/1.3462069.
  10. 2009

    1. Oehme, M; Hähnel, D; Werner, J; u. a. (2009): „Si Esaki diodes with high peak to valley current ratios“. In: Appl. Phys. Lett. American Institute of Physics (Appl. Phys. Lett.), 95 (24), S. 242109--, doi: 10.1063/1.3274136.
    2. Karmous, A; Kirfel, O; Oehme, M; u. a. (2009): „MBE growth of Ge quantum dot structures in oxide windows“. In: IOP Conference Series: Materials Science and Engineering. (IOP Conference Series: Materials Science and Engineering), 6 (1), S. 012020.