IHT-Kolloquium "Bauelemente und Technologien"

5. Februar 2019, 16:00 Uhr

Prof. Dr. Martin Pfost - Simulation, Measurement and Lowering of Self-Heating in Power Semiconductors

Zeit: 5. Februar 2019, 16:00 – 17:30 Uhr
Veranstaltungsort: Universität Stuttgart
Institut für Halbleitertechnik
Seminarraum des IHTs - Raum 1.444
Pfaffenwaldring 47
70569  Stuttgart
Telefon: +49 711 685 68003

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Am Dienstag den 05. Februar setzt sich das IHT-Kolloquium fort, es spricht:

Prof. Dr. Martin Pfost

Lehrstuhl für Energiewandlung,

Fakultät für Elektrotechnik und Informationstechnik,

Technische Universität Dortmund

zum Thema:

„Simulation, Measurement and Lowering of Self-Heating in Power Semiconductors”


Power semiconductors are often subject to high power dissipation and thus substantial self-heating. This limits their safe operating area because very high device temperatures can lead to thermal runaway and subsequent destruction. We will discuss how device temperatures can be accurately measured and predicted to avoid oversizing and to fully exploit the potential of modern technologies. We will also show how peak temperatures can be lowered solely by layout modifications, allowing for substantial chip size reductions.

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