| Zeit: | 5. Februar 2019, 16:00 – 17:30 Uhr |
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| Veranstaltungsort: | Universität Stuttgart Institut für Halbleitertechnik Seminarraum des IHTs - Raum 1.444 Pfaffenwaldring 47 70569 Stuttgart Telefon: +49 711 685 68003 |
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Am Dienstag den 05. Februar setzt sich das IHT-Kolloquium fort, es spricht:
Prof. Dr. Martin Pfost
Lehrstuhl für Energiewandlung,
Fakultät für Elektrotechnik und Informationstechnik,
Technische Universität Dortmund
zum Thema:
„Simulation, Measurement and Lowering of Self-Heating in Power Semiconductors”
Abstract
Power semiconductors are often subject to high power dissipation and thus substantial self-heating. This limits their safe operating area because very high device temperatures can lead to thermal runaway and subsequent destruction. We will discuss how device temperatures can be accurately measured and predicted to avoid oversizing and to fully exploit the potential of modern technologies. We will also show how peak temperatures can be lowered solely by layout modifications, allowing for substantial chip size reductions.