Our work on the experimental determination of band offsets in lattice-matched SiGeSn/Ge heterostructures has now been published in Materials Science in Semiconductor Processing.
Using the C–V intercept method proposed by Kroemer, we determine the conduction and valence band offsets of lattice-matched SiGeSn/Ge heterostructures. The obtained experimental data contribute to the understanding of band alignment in Group-IV semiconductor heterostructures and provide valuable input for the design of future electronic and optoelectronic devices based on SiGeSn.
📄 Read the paper here: https://doi.org/10.1016/j.mssp.2026.110999
