Our latest research, published in “Advanced Electronic Materials”, looks at how surface treatments can precisely tune the performance of IGZO-based memristors to meet the needs of both digital memory and neuromorphic computing.
By using Ar-plasma and ozone treatments, our team was able to adjust the switching behavior of W/IGZO/Pt devices between abrupt (great for digital memory) and gradual (good for synaptic devices) types. Importantly, all devices showed reliable endurance and retention while working at low voltages (≤ 1 V). This work highlights IGZO’s potential as a flexible material for combining memory and neuromorphic computing functions on a single platform.
More info at https://doi.org/10.1002/aelm.70530
