Scientists from Forschungszentrum Jülich, FZJ, the University of Stuttgart, and the Leibniz Institute for High Performance Microelectronics (IHP), together with their French partner CEA-Leti, have developed the first electrically pumped continuous-wave semiconductor laser composed exclusively of elements from the fourth group of the periodic table – the “silicon group”. Built from stacked ultrathin layers of silicon germanium-tin and germanium-tin, this new laser is the first of its kind directly grown on a silicon wafer, opening up new possibilities for on-chip integrated photonics. The findings have been published in the renowned scientific journal Nature Communications.
For further information, please read the original press release on the website of Forschungszentrum Jülich:
fz-juelich.de/en/news/archive/press-release/2024/the-last-missing-piece-of-silicon-photonics
Original publication
Seidel, L., Liu, T., Concepción, O. et al.
Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors
Nat Commun (2024), DOI: 10.1038/s41467-024-54873-z
