M. Oehme, M. Sarlija, D. Hähnel, M. Kaschel, J. Werner, E. Kasper and J. Schulze, "Very high room temperature peak to valley current ratio in Si Esaki Tunneling Diodes", IEEE Trans. Electron Devices, vol. 57, no. 11, pp. 2857-2863 (2010)

E. Kasper, M. Oehme, T. Aguirov, J. Werner, M. Kittler, and J. Schulze, "Room temperature direct band gap emission from Ge p-i-n heterojunction photodiodes", post deadline paper on 7th International Conference on Group IV Photonics, LEOS, Beijing, China, (2010)

M. Schmid, M. Oehme, M. Kaschel, J. Werner, E. Kasper, and J. Schulze, "Franz-Keldysh effect in Germanium on Silicon p-i-n photodetectors", 7th International Conference on Group IV Photonics , LEOS, Beijing, China, pp. 329-331 (2010)

O. Moutanabbir, M. Reiche, A. Hähnel, M. Oehme, E. Kasper, "Multiwavelength micro-Raman analysis of strain in nanopatterned ultrathin strained silicon-on-insulator", Appl. Phys. Lett. 97, 053105 (2010) (3 pages)

E.Kasper, "Prospects and challenges of silicon/germanium on-chip optoelectronics", Frontiers of Optoelectronics in China 3, 143-152 (2010)

M. Oehme, A. Karmous, M. Sarlia, J. Werner, E. Kasper, J. Schulze, "Ge quantum dot tunneling diode with room temperature negative differential resistance", Appl. Phys. Lett. 97, 012101 (2010) (3 pages)

E. Kasper, M. Oehme, J. Schulze, S. Klinger, M. Berroth, "High frequency behaviour of Ge pin junctions", International WorkShop on New Group IV Semiconductor Nanoelectronics, Digest of Papers(2010)1-3,Tohoku University, Sendai, JAPAN

J. P. Leitão , N. M. Santos, N. A. Sobolev, M. R. Correia, M. C. Carmo, E. Kasper, J. Werner, "Optical study of a tensilely strained Si type-II quantum well on a relaxed SiGe graded buffer ", SINEP-09(2009)125-126,NETBIBLIO,Spain(ISBN:978-84-9745-416-2)

E.Kasper, "Prospect and Challenges of On-Chip Optoelectronics", SINEP-09(2009)27,NETBIBLIO,Spain(ISBN:978-84-9745-416-2)

Thomas Buck and Erich Kasper, "RF MEMS phase shifters for 24 and 77 GHz on high resistivity silicon", 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, DIGEST OF PAPERS(2010)224-227

Hongya Xu and Erich Kasper, "A De-embedding Procedure for One-port Active mm-Wave Devices", 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, DIGEST OF PAPERS(2010)37-40

Erich Kasper, Dietmar Kissinger, Robert Weigel(Eds.), 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, DIGEST OF PAPERS( ISBN: 978-1-4244-5458-7)IEEE(2010)

I. Berbezier, J. P. Ayoub, A. Ronda, M. Oehme, K. Lyutovich, E. Kasper, M. Di Marino, G. Bisognin, E. Napolitani and M. Berti, "Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping", J. Appl. Phys. 107 (3) (2010) 034309 - (5 pages)

A. Medvid, P. Onufrijevs, K. Lyutovich, M. Oehme, E. Kasper, N. Dmitruk, O. Kondratenko, I. Dmitruk, I. Pundyk, "Self-Assembly of Nanohills in Si1-xGex/Si Hetero-Epitaxial Structure Due to Ge Redistribution Induced by Laser Radiation", J. Nanoscience and Nanatechnology, 10 (2) pp. 1094-1098 (2010)

M. Oehme, M. Kaschel, J. Werner, O. Kirfel, M. Schmid, B. Bahouchi, E. Kasper J. Schulze, "Germanium on Silicon Photodetectors with broad spectral range", J. Electrochem. Soc., 157 pp. H144-H148 (2010)

M. Oehme, O. Kirfel, J. Werner, M. Kaschel, E. Kasper, J. Schulze, "Antimony doped Si Esaki diodes without post growth annealing", Thin Solid Films, 518, pp. 65-67 (2010)

J. Werner, M. Oehme, E. Kasper, J. Schulze, "Influence of the modulation doping to the mobility of two-dimensional electron gases in Si/SiGe", Thin Solid Films 518 (2010) S234-S236