Publikationen 2011

M. Oehme, "Silicon interband tunneling diodes with high peak-to-valley ratios", Thin Solid Films, doi:10.1016/j.tsf.2011.10.098 (2011)

J. Schulze, M. Oehme and J. Werner, "MBE grown Ge/Si p-i-n layer sequence for photonic devices", Thin Solid Films, doi:10.1016/j.tsf.2011.10.104 (2011)

J. Werner, M. Oehme, A. Schirmer, E. Kasper, J. Schulze, "Molecular beam epitaxy grown GeSn p-i-n photodetectors integrated on Si", Thin Solid Films, doi:10.1016/j.tsf.2011.10.111 (2011)

E. Kasper, J. Werner, M. Oehme, S. Escoubas, N. Burle, J. Schulze, "Growth of Silicon Based Germanium Tin Alloys", Thin Solid Films, doi:10.1016/j.tsf.2011.10.114 (2011)

S. Stefanov, J.C. Conde, A. Benedetti, C. Serra, J. Werner, M. Oehme, J. Schulze, S. Chiussi, "Laser assisted formation of binary and ternary Ge/Si/Sn alloys", Thin Solid Films, doi:10.1016/j.tsf.2011.10.101 (2011)

M. Oehme, J. Werner, M. Gollhofer, M. Schmid, M. Kaschel, E. Kasper, J. Schulze, "Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si", IEEE Phot. Techn. Lett., vol. 23, No. 23, pp. 1751-1753 (2011)

Y. Zhou, W. Han, L.-T. Chang, F. Xiu, M. Wang, M. Oehme, I.A. Fischer, J. Schulze, R.K. Kawakami, K.L. Wang, "Electrical spin injection and transport in germanium", Phys. Rev. B 84, 125323 (2011)

T. Arguirov, M. Kittler, M. Oehme, N.V. Abrosimov, E. Kasper, J. Schulze, "Room temperature direct band-gap emission from an unstrained Ge p-i-n LED on Si", Solid State Phenomena, 178-179, pp 25-30 (2011)

D. Hähnel, M. Oehme, M. Sarlija, A. Karmous, M. Schmid, J. Werner, O. Kirfel, I. Fischer, J. Schulze, "Germanium vertical Tunneling Field-Effect Transistor", Solid State Electronics, 62, pp.132-137 (2011)

A. Karmous, M. Oehme, J. Werner, O. Kirfel, E. Kasper and J. Schulze, "Local strained silicon platform based on differential SiGe/Si epitaxy", Journal of Crystal Growth, 324, 1, pp. 154-156 (2011)

M. Kaschel , M. Schmid, M. Oehme, J. Werner, J. Schulze, "Germanium photodetectors on Silicon-on-insulator grown with differential molecular beam epitaxy in silicon wells", Solid State Electronics, 60, pp.105–111 (2011)

M. Kittler, T. Arguirov, M. Oehme, Y. Yamamoto, B. Tillack, N.V. Abrosimov, "Photoluminescence study of Ge containing crystal defects", Phys. Status Solidi A 208, no. 4, pp. 754-759 (2011)

T. S. Perova, J. Wasyluk, K. Lyutovich, E. Kasper, M. Oehme, K. Rode, and A. Waldron, "Composition and strain in thin Si_1-xGe_x virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction", J. Appl. Phys. 109, 033502 (2011)

J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, J. Schulze, "Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy", Appl. Phys. Lett. 98, 061108 (2011)