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Institute for Semiconductor Engineering |
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Research Overview |
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Molecular Beam Epitaxi (MBE)
contact: Dr. M. Oehme
E-Mail: oehme
Room: 1.417
Tel.: +49-(0)711-685-68004 |
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Transit Frequency Enhancement of SiGe- Hetero- Bipolar- Transistors beyond 100 GHz
contact: Dipl.-Ing. Hongya Xu
E-Mail: xu
Room; 1.411
Tel.: +49-(0)711-685-68006 |
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Vertical sub 100nm MOS-transistor with SiGe heterobarrier(VAHMOS)
contact : Dr. Klara Lyutovich
E-Mail: lyutovich
Room: 1.412
Tel.: +49-(0)711-685-68005 |
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Highly integrated SiGe-SIMMWIC-Modules
(SIMMWIC: Silicon Monolithic Millimeter Wave Integrated Circuits)
contact: Dipl.-Ing. Michael Morschbach
E-Mail: morschbach
Room: 1.406
Tel.: +49-(0)711-685-68011 |
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Technology cleanroom
contact: Klaus D. Matthies
E-Mail: matthies
Room: 1.407
Tel.: +49-(0)711-685-68010 |
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